Abstract:Atomistic electronic structure calculations are performed to study the coherent inter-dot couplings of the electronic states in a single InGaAs quantum dot molecule. The experimentally observed excitonic spectrum [12] is quantitatively reproduced, and the correct energy states are identified based on a previously validated atomistic tight binding model. The extended devices are represented explicitly in space with 15 million atom structures. An excited state spectroscopy technique is presented in which the externally applied electric field is swept to probe the ladder of the electronic energy levels (electron or hole) of one quantum dot through anti-crossings with the energy levels of the other quantum dot in a two quantum dot molecule. This technique can be applied to estimate the spatial electron-hole spacing inside the quantum dot molecule as well as to reverse engineer quantum dot geometry parameters such as the quantum dot separation. Crystal deformation induced piezoelectric effects have been discussed in the literature as minor perturbations lifting degeneracies of the electron excited (P and D) states, thus affecting polarization alignment of wave function lobes for III-V Heterostructures such as single InAs/GaAs quantum dots. In contrast this work demonstrates the crucial importance of piezoelectricity to resolve the symmetries and energies of the excited states through matching the experimentally measured spectrum in an InGaAs quantum dot molecule under the influence of an electric field. Both linear and quadratic piezoelectric effects are studied for the first time for a quantum dot molecule and demonstrated to be indeed important. The net piezoelectric contribution is found to be critical in determining the correct energy spectrum, which is in contrast to recent studies reporting vanishing net piezoelectric contributions.

Spin-flip Raman scattering of the resident electron in singly charged (In,Ga)As/GaAs quantum dot ensembles

Stimulated and Spontaneous Optical Generation of Electron Spin Coherence in Charged GaAs Quantum Dots

Spin-orbit Coupling and Electric-Dipole Spin Resonance in a Nanowire Double Quantum Dot

Optical alignment and polarization conversion of neutral exciton spin in individual InAs/GaAs quantum dots

Efficient electron spin detection with positively charged quantum dots

Electric field tunable exchange interaction in InAs/GaAs coupled quantum dots

A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dots

Resonant Raman scattering off neutral quantum dots

Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot

Very Efficient Electrical Spin Injection (/detection) into Quantum Dots at Zero Magnetic Field

Electronic Band Structures and Electron Spins of InAs/GaAs Quantum Dots Induced by Wetting-Layer Fluctuation

Theory of Excitons in Cubic III-V Semiconductor GaAs, InAs and GaN Quantum Dots: Fine Structure and Spin Relaxation

Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Singlet-triplet transition in a few-electron lateral InGaAs-InAlAs quantum dot

Auger and spin dynamics in a self-assembled quantum dot

Tuning of Electron G Factors by Electric Fields in Asymmetric InAs Quantum Dot Molecules

Hyperfine coupling of hole and nuclear spins in symmetric (111)-grown GaAs quantum dots

Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations

Exciton spin-flip rate in quantum dots determined by a modified local density of optical states

Fast preparation of single hole spin in InAs/GaAs quantum dot in Voigt geometry magnetic field

Direct Measurement of Spin Dynamics in Inas/Gaas Quantum Dots Using Time-Resolved Resonance Fluorescence