Heralded preparation of spin qubits in droplet-etched GaAs quantum dots using quasiresonant excitation

Caspar Hopfmann,Nand Lal Sharma,Weijie Nie,Robert Keil,Fei Ding,Oliver G. Schmidt
DOI: https://doi.org/10.1103/PhysRevB.104.075301
2021-08-06
Abstract:We present a comprehensive study on heralded spin preparation employing excited state resonances of droplet-etched GaAs quantum dots. This achievement will facilitate future investigations of spin qubit based quantum memories using the GaAs quantum dot material platform. By observation of excitation spectra for a range of fundamental excitonic transitions, the properties of different quantum dot energy levels, i.e., shells, are revealed. The innovative use of polarization-resolved excitation and detection in the context of quasiresonant excitation spectroscopy of quantum dots greatly simplifies the determination of the spin preparation fidelities—irrespective of the relative orientations of laboratory and quantum dot polarization eigenbases. By employing this method, spin preparation fidelities of quantum dot ground states of up to 85% are found. Additionally, the characteristic nonradiative decay time is investigated as a function of ground state, excitation resonance, and excitation power level, yielding decay times as low as 29 ps for s−p shell exited state transitions. Finally, by time-resolved correlation spectroscopy it is demonstrated that the employed excitation scheme has a significant impact on the electronic environment of quantum dot transitions and their apparent brightness. https://doi.org/10.1103/PhysRevB.104.075301 ©2021 American Physical Society
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