Back-action-induced non-equilibrium effect in electron charge counting statistics

HaiOu Li,Ming Xiao,Gang Cao,Cheng Zhou,RuNan Shang,Tao Tu,GuangCan Guo,HongWen Jiang,GuoPing Guo
DOI: https://doi.org/10.1063/1.3691255
IF: 4
2012-02-27
Applied Physics Letters
Abstract:We study real-time charge-counting statistics measured by a quantum point contact (QPC) coupled to a single quantum dot (QD) subject to different back-action strengths. By tuning the QD-QPC coupling or the QPC bias, we control the QPC back-action, which drives the QD electrons out of thermal equilibrium. The random telegraph signal (RTS) statistics show strong and tunable non-thermal-equilibrium saturation effect, which can be quantitatively characterized as a back-action-induced tunneling-out rate. We find that the QD-QPC coupling and QPC bias voltage play different roles in determining the back-action strength and the cut-off energy.
physics, applied
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