Abstract:Unprecedented control over the manufacture of electronic devices on nanometer scale has allowed to perform highly controllable and fine-tuned experiments in the quantum regime where exotic effects can nowadays be measured. In quantum dot devices, enhanced conductance below a characteristic energy scale is the signature of Kondo singlet formation. Precise predictions of quantum transport properties in similar nanoelectronics devices are desired to design optimal functionality and control. Standard transport methods suffer from limitations in nanostructure specifics, set-up design, temperature and voltage regime of applicability. To overcome these issues, such that we obtain modelling flexibility and accurate conductance predictions, in this thesis we analytically derive alternative and improved quantum transport formulations having as their starting point scattering theory in the Landauer-Büttiker formula, linear response theory in the Kubo formula, nonequilibrium Keldysh theory in the Meir-Wingreen formula and Fermi liquid theory in the Oguri formula. We perform a systematic benchmark of our exact expressions, comparing with the standard approaches using numerical renormalization group techniques. The new formulations not only reproduce literature results, but also show higher accuracy and computational efficiency, as well as a wider applicability under regimes and conditions out of reach by existing methods. We also derive generalized effective models for multi-orbital two-lead interacting nanostructures in both Coulomb blockade and mixed-valence regime, which yield reusable conductance predictions directly in terms of the effective model parameters. We conclude by applying our novel formulations to complex nanoelectronics systems, including a single-molecule benzene transistor, a charge-Kondo quantum dot made from graphene and semiconductor triple quantum dot.

Conditional statistics of electron transport in interacting nanoscale conductors

Detector-induced Backaction on the Counting Statistics of a Double Quantum Dot.

Real-time detection and control of correlated charge tunneling in a quantum dot

Back-action-induced non-equilibrium effect in electron charge counting statistics

Quantum transport in interacting nanodevices: from quantum dots to single-molecule transistors

Quantum Time-Dependent Monte Carlo Simulation of Electron Devices with 2D Linear-Band Materials: a Genuine TeraHertz Signature for Graphene

FLUCTUATIONS IN INELASTIC TUNNELING OF ELECTRONS THROUGH SERIALLY COUPLED DOUBLE QUANTUM DOTS

Nonequilibrium Steady State Full Counting Statistics in the Noncrossing Approximation

Interacting electrodynamics of short coherent conductors in quantum circuits

Strongly correlated charge transport in silicon MOSFET quantum dots

Electron counting in quantum dots

Shaping electronic flows with strongly correlated physics

Designable electron transport features in one-dimensional arrays of metallic nanoparticles: Monte Carlo study of the relation between shape and transport

Revealing Hidden States in Quantum Dot Array Dynamics: Quantum Polyspectra Versus Waiting Time Analysis

Field-Dependent THz Transport Nonlinearities in Semiconductor Nano Structures

Tunable Super-Poissonian Noise and Negative Differential Conductance in Two Coherent Strongly Coupled Quantum Dots

Monte Carle Simulation of Quantum Transport Through Nanostructures

Particle current statistics in driven mesoscale conductors

Charge-neutral nonlocal response in superconductor-InAs nanowire hybrid devices

Real-time Counting of Single Electron Tunneling Through a T-shaped Double Quantum Dot System

Complex non-Markovian effect on time-dependent quantum transport.