Shaping electronic flows with strongly correlated physics

A. Erpenbeck,E. Gull,G. Cohen

2023-08-15

Abstract:Nonequilibrium quantum transport is of central importance in nanotechnology. Its description requires the understanding of strong electronic correlations, which couple atomic-scale phenomena to the nanoscale. So far, research in correlated transport focused predominantly on few-channel transport, precluding the investigation of cross-scale effects. Recent theoretical advances enable the solution of models that capture the interplay between quantum correlations and confinement beyond a few channels. This problem is the focus of this study. We consider an atomic impurity embedded in a metallic nanosheet spanning two leads, showing that transport is significantly altered by tuning only the phase of a single, local hopping parameter. Furthermore -- depending on this phase -- correlations reshape the electronic flow throughout the sheet, either funneling it through the impurity or scattering it away from a much larger region. This demonstrates the potential for quantum correlations to bridge length scales in the design of nanoelectronic devices and sensors.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

What problem does this paper attempt to address?

The paper primarily explores how to regulate electron flow under strong correlation physical conditions by adjusting the phase of a single local hopping parameter, and demonstrates how this regulation affects electron transport characteristics from the atomic scale to the nanoscale.

Specifically, the study focuses on an atomic defect embedded in a metallic nanosheet, connected at both ends by conductive leads, and how significantly changing the electron transport behavior can be achieved by merely altering the phase of the interaction between the defect and its neighboring atoms. The authors found that depending on this phase, the electron flow is either funneled through the defect (similar to a "funnel" effect) or scattered away over a larger area. This indicates that quantum correlations can be used to connect different length scales in the design of nanoelectronic devices and sensors.

The main contributions of this paper include:
1. **Theoretical Simulation**: Using an improved quantum Monte Carlo method (inchworm Quantum Monte Carlo, iQMC) to simulate a model of a 2D metallic nanosheet with a strongly correlated defect, which is in a non-equilibrium state.
2. **Regulation Mechanism**: Demonstrating that by adjusting the phase of the interaction between the defect and adjacent atoms, the electron flow distribution of the entire system can be effectively controlled, thereby affecting the overall conductivity.
3. **Application of the Kondo Effect**: Investigating how the Kondo effect enhances or suppresses the current through the defect, and analyzing its impact by comparing two different system configurations (same or opposite phases).
4. **Experimental Prediction**: Proposing a method based on measuring interaction currents to identify and characterize the impact of strong correlation effects on electron flow, without prior knowledge of specific system details.

In summary, this paper provides a new perspective on understanding how to utilize quantum correlation effects to control electron transport at the nanoscale, and opens up potential possibilities for future applications in the field of nanoelectronics.