Abstract:We report both zinc-blende (ZB) and wurtzite (WZ) crystal phase self-assembled GaAs quantum dots (QDs) embedding in a single GaAs/AlGaAs core-shell nanowires (NWs). Optical transitions and single-photon characteristics of both kinds of QDs have been investigated by measuring photoluminescence (PL) and time-resolved PL spectra upon application of hydrostatic pressure. We find that the ZB QDs are of direct band gap transition with short recombination lifetime (~1 ns) and higher pressure coefficient (75-100 meV/GPa). On the contrary, the WZ QDs undergo a direct-to-pseudodirect bandgap transition as a result of quantum confinement effect, with remarkably longer exciton lifetime (4.5-74.5 ns) and smaller pressure coefficient (28-53 meV/GPa). These fundamentally physical properties are further examined by performing state-of-the-art atomistic pseudopotential calculations.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to study the optical transitions and single - photon characteristics of two GaAs quantum dots (QDs) with different crystal structures - zinc - blende (ZB) and wurtzite (WZ) phases - embedded in GaAs/AlGaAs core - shell nanowires (NWs). Specifically, the authors study the luminescence characteristics, exciton lifetimes, and their pressure - response behaviors of these two types of quantum dots by applying hydrostatic pressure, in order to reveal their optical transition mechanisms under different conditions. ### Main problems: 1. **Optical transition mechanisms of GaAs quantum dots with different crystal structures**: - ZB GaAs QDs and WZ GaAs QDs show significant differences in optical transitions. - ZB QDs have direct - band - gap transitions, while WZ QDs experience transitions from direct to pseudo - direct band - gaps. 2. **Differences in exciton lifetimes and pressure coefficients of quantum dots**: - The exciton lifetime of ZB QDs is relatively short (about 1 ns), and the pressure coefficient is relatively large (75 - 100 meV/GPa). - The exciton lifetime of WZ QDs is relatively long (4.5 - 74.5 ns), and the pressure coefficient is relatively small (28 - 53 meV/GPa). 3. **Influence of the quantum - confinement effect**: - Due to the quantum - confinement effect, WZ GaAs QDs may have indirect - band - gap transitions, which are different from the direct - band - gap in the bulk material. ### Experimental methods: - **Photoluminescence (PL) and time - resolved PL spectroscopy**: Used to measure the luminescence characteristics and exciton lifetimes of quantum dots. - **Hydrostatic pressure experiment**: Used to study the optical transitions and pressure responses of quantum dots by applying pressure. - **High - resolution transmission electron microscopy (HRTEM)**: Used to confirm the existence of two crystal structures, ZB and WZ, in nanowires. ### Theoretical calculations: - Atomic - level pseudopotential methods are used for calculations to explain the experimentally observed phenomena and further verify the band - gap transition mechanisms of quantum dots. ### Application prospects: - ZB GaAs QDs are suitable for use as efficient single - photon sources. - WZ GaAs QDs are more suitable for single - photon quantum - storage devices or photodetectors. Through these studies, the authors hope to provide a method for integrating single - photon emitters and detectors for future photonics and sensing applications.

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