Abstract:By embedding quantum wells (QWs) in semiconductor nanowires (NWs), the confined electronic states perpendicular to the NW axis as well as free movements along the NW axis can be simultaneously achieved. Among them, AlGaAs NWs are ideal candidates for radial two-dimensional GaAs QWs because of their nearly perfect lattice matching, negligible piezoelectric, and strain effects. A series of studies based on AlGaAs NWs with embedded QWs have revealed novel electronic states and outstanding properties. On the other hand, their electrical properties and underlying mechanism at the nanometer scale have less been reported. Herein, the electrical properties of GaAs QW/AlGaAs NW interfaces are quantitatively characterized via off-axis electron holography. Our results reveal that considerable electrons are confined in the GaAs QW, leaving massive holes distributing at the GaAs/AlGaAs hetero-interfaces. In addition, in combination with the first-principles calculations, the redistribution of charges causing band bending at GaAs/AlGaAs interfaces is calculated, which complies well with our experiment. The quantum confinement effect in this heterostructure due to the introduction of GaAs QW is also revealed, which causes the change of related band gap, leading to blue-shift in photoluminescence (PL) spectra. This work provides insight into the nanometer-scale electrical properties of III-V semiconductor NWs comprising QW, which may shed light on optimizing similar hybrid structures as optoelectronic devices in the future.

Zinc-blende and wurtzite GaAs quantum dots in nanowires studied using hydrostatic pressure

Photoluminescence Studies on Self-Organized 1.55-Μm InAs/InGaAsP/InP Quantum Dots under Hydrostatic Pressure

Bandgap Engineering in Wurtzite Gaas Nanowires by Hydrostatic Pressure

Exciton states and interband optical transitions in wurtzite InGaN/GaN quantum dot nanowire heterostructures: Effects of hydrostatic pressure

In Situ Tuning Biexciton Antibinding-Binding Transition and Fine-Structure Splitting Through Hydrostatic Pressure in Single Ingaas Quantum Dots

Semiconductor–metal Transition in GaAs Nanowires under High Pressure*

Excitation-wavelength-dependent photoluminescence in GaAs nanowires under high-pressure

High Pressure Photoluminescence and Raman Investigations of CdSe∕ZnS Core/shell Quantum Dots

Enhancing the Light Emission of GaAs Nanowires by Pressure-Modulated Charge Transfer

High Pressure Photoluminescence and Raman Studies of ZnxCd1−xSe Quantum Dots

Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures

Photoluminescence studies of InGaAs/AlGaAs multiple quantum wells under high pressure

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Formation Mechanism and Optical Properties of InAs Quantum Dots on the Surface of GaAs Nanowires.

Influence of Pressure on Exciton States and Interband Optical Transitions in Wurtzite Ingan/Gan Coupled Quantum Dot Nanowire Heterostructures with Polarization and Dielectric Mismatch

High Pressure Photoluminescence Of Cdznse Quantum Dots: Alloying Effect

Effects Of Internal Strain And External Pressure On Electronic Structures And Optical Transitions Of Self-Assembled Inxga1-Xas/Gaas Quantum Dots: An Experimental And Theoretical Study

Large Optical Stark Shifts in Single Quantum Dots Coupled to Core-Shell GaAs/AlGaAs Nanowires.

Unexpected Benefits of Stacking Faults on the Electronic Structure and Optical Emission in Wurtzite GaAs/GaInP Core/shell Nanowires

Study of Charge Distributions and Electrical Properties in GaAs/AlGaAs Single Quantum Well/Nanowire Heterostructures

High Pressure Photoluminescence Studies of Carbon-Induced Germanium Quantum Dots Grown on Si