Abstract:We present an extensive experimental and theoretical study of the proximity effect in InAs nanowires connected to superconducting electrodes. We fabricate and investigate devices with suspended gate-controlled nanowires and nonsuspended nanowires, with a broad range of lengths and normal-state resistances. We analyze the main features of the current-voltage characteristics: the Josephson current, excess current, and subgap current as functions of length, temperature, magnetic field, and gate voltage, and compare them with theory. The Josephson critical current for a short-length device, L = 30 nm, exhibits a record high magnitude of 800 nA at low temperature that comes close to the theoretically expected value. The critical current in all other devices is typically reduced compared to the theoretical values. The excess current is consistent with the normal resistance data and agrees well with the theory. The subgap current shows a large number of structures; some of them are identified as subharmonic gap structures generated by multiple Andreev reflection. The other structures, detected in both suspended and nonsuspended devices, have the form of voltage steps at voltages that are independent of either the superconducting gap or length of the wire. By varying the gate voltage in suspended devices, we are able to observe a crossover from typical tunneling transport at large negative gate voltage, with suppressed subgap current and negative excess current, to pronounced proximity junction behavior at large positive gate voltage, with enhanced Josephson current and subgap conductance as well as a large positive excess current.

Control of charging in resonant tunneling through InAs nanocrystal quantum dots

Detection of Single-Electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic-Force Microscopy.

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

Charge Transport in InAs Nanowire Josephson Junctions

The Photocurrent of Resonant Tunneling Diode Controlled by the Charging Effects of Quantum Dots

Metastable state involved resonant tunneling through single InAs/GaAs quantum dot

Quantum constriction at the interface between a superconducting nanocrystal and an electron accumulation layer

Charging dynamics of single InAs quantum dots under both resonant and above-band excitation

Quantum confinement effects in Pb Nanocrystals grown on InAs

Real-time detection and control of correlated charge tunneling in a quantum dot

Self-aligned charge read-out for InAs nanowire quantum dots

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Charge pumping in carbon nanotube quantum dots

Dynamics of Tunneling into Charge-Tunable Si Quantum Dots

Asymmetric Franck-Condon factors in suspended carbon nanotube quantum dots

Regimes of electronic transport in doped InAs nanowire

CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

Detection of charge states of an InAs nanowire triple quantum dot with an integrated nanowire charge sensor