Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

C. B. Simmons,Madhu Thalakulam,B. M. Rosemeyer,B. J. Van Bael,E. K. Sackmann,D. E. Savage,M. G. Lagally,R. Joynt,M. Friesen,S. N. Coppersmith,M. A. Eriksson

DOI: https://doi.org/10.1021/nl9014974

2009-05-11

Abstract:We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot. Charge sensing measurements enable the extraction of the tunnel coupling, t, between the quantum dots as a function of the voltage on the top gates defining the device. Control of the voltage on a single such gate tunes the barrier separating the two dots. The measured tunnel coupling is an exponential function of the gate voltage. The ability to control t is an important step towards controlling spin qubits in silicon quantum dots.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: How to achieve accurate perception of the charge state and controllable tunneling coupling in the Si/SiGe double - quantum - dot system. Specifically, the authors hope to demonstrate the following points:

1. **Charge perception**: Detect the transfer of single electrons between quantum dots by integrating a Quantum Point Contact (QPC). This is crucial for understanding the charge behavior inside the quantum dots.

2. **Tunable tunneling coupling**: Study how to control the tunneling coupling strength between two quantum dots by adjusting the top - gate voltage. This involves how to smoothly transition from a large single quantum dot to a weakly - or strongly - coupled double quantum dot, and finally reach an isolated double - quantum - dot system.

3. **Experimental verification**: Verify the above - mentioned theoretical models through experimental data, especially the relationship between the tunneling coupling strength \(t\) and the gate voltage \(V_M\). The results show that the tunneling coupling \(t\) is an exponential function of the gate voltage \(V_M\).

4. **Application prospects**: These results are of great significance for the future control of spin qubits in silicon - based quantum dots. In particular, basic operations in quantum computing such as SWAP operations can be performed by controlling the tunneling coupling.

### Formula summary

- **Relationship between tunneling coupling and gate voltage**:
\[
t(V_M)=t_0e^{\beta V_M}
\]
where \(t_0\) and \(\beta\) are fitting parameters, and \(V_M\) is the intermediate - gate voltage.

- **Fitting formula for charge - sensing signal**:
\[
I_{QPC}(\epsilon)=I_0 + \delta I\frac{\epsilon}{\Omega}\tanh\left(\frac{\Omega}{2k_BT_e}\right)+\frac{\partial I}{\partial\epsilon}\epsilon
\]
where \(\epsilon\) is the detuning energy, \(T_e\) is the electron temperature, \(\Omega = \sqrt{\epsilon^2 + 4t^2}\), and \(I_0\), \(\delta I\) and \(\frac{\partial I}{\partial\epsilon}\) are the background current, sensor sensitivity and direct gate - QPC coupling respectively.

These studies provide an important technological basis for the realization of quantum computing based on silicon materials.