Abstract:A controllable and coherent light-matter interface is an essential element for a scalable quantum information processor. Strong coupling to an on-chip cavity has been accomplished in various electron quantum dot systems, but rarely explored in the hole systems. Here we demonstrate a hybrid architecture comprising a microwave transmission line resonator controllably coupled to a hole charge qubit formed in a Ge/Si core/shell nanowire (NW), which is a natural one-dimensional hole gas with a strong spin-orbit interaction (SOI) and lack of nuclear spin scattering, potentially enabling fast spin manipulation by electric manners and long coherence times. The charge qubit is established in a double quantum dot defined by local electrical gates. Qubit transition energy can be independently tuned by the electrochemical potential difference and the tunnel coupling between the adjacent dots, opening transverse (σ x) and longitudinal (σ z) degrees of freedom for qubit operation and interaction. As the qubit energy is swept across the photon level, the coupling with resonator is thus switched on and off, as detected by resonator transmission spectroscopy. The observed resonance dynamics is replicated by a complete quantum numerical simulation considering an efficient charge dipole-photon coupling with a strength up to 2π × 55 MHz, yielding an estimation of the spin-resonator coupling rate through SOI to be about 10 MHz. The results inspire the future researches on the coherent hole-photon interaction in Ge/Si nanowires.

Charge sensing and controllable tunnel coupling in a Si/SiGe double quantum dot

Single-electron Quantum Dot in Si/SiGe with Integrated Charge-Sensing

Top-gated few-electron double quantum dot in Si/SiGe

Gate-controlled charge transfer in Si:P double quantum dots

Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

Charge States and Transition of Double Quantum Dot in the Few-Electron Regime

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots

Coupled vertical double quantum dots at single-hole occupancy

Undoped accumulation-mode Si/SiGe quantum dots

Charge-sensing of a Ge/Si core/shell nanowire double quantum dot using a high-impedance superconducting resonator

A gate-defined silicon quantum dot molecule

Gate Tunable Hole Charge Qubit Formed in a Ge/Si Nanowire Double Quantum Dot Coupled to Microwave Photons

Measurements of capacitive coupling within a quadruple quantum dot array

Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate

Controllable Tunnel Coupling and Molecular States in a Graphene Double Quantum Dot

Quantum dots with split enhancement gate tunnel barrier control

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.