Abstract:Minimizing power consumption is vitally important in embedded system design; power consumption determines battery lifespan. Ultra-low-power designs may even permit embedded systems to operate without batteries by scavenging energy from the environment. Moreover, managing power dissipation is now a key factor in integrated circuit packaging and cooling. As a result, embedded system price, size, weight, and reliability are all strongly dependent on power dissipation. Recent developments in nanoscale devices open new alternatives for low-power embedded system design. Among these, single-electron tunneling transistors (SETs) hold the promise of achieving the lowest power consumption. Unfortunately, most analysis of SETs has focused on single devices instead of architectures, making it difficult to determine whether they are appropriate for low-power embedded systems. Evaluating the use of SETs in large-scale digital systems requires novel architectural and circuit design. SET-based design imposes numerous challenges resulting from low driving strength, relatively large static power consumption, and the presence of reliability problems resulting from random background charge effects. We propose a fault-tolerant, hybrid SET/CMOS, reconfigurable architecture, named IceFlex, that can be tailored to specific requirements and allows tradeoffs among power consumption, performance requirements, operation temperature, fabrication cost, and reliability. Using IceFlex as a testbed, we characterize the benefits and limitations of SETs in embedded system designs. In particular, we focus on the use of SETs in room-temperature ultra-low-power embedded systems such as wireless sensor network nodes. We also consider high-performance applications such as multimedia consumer electronics. We see this work as a first step in determining the potential of ultra-low-power embedded system design using SETs.

A model for energy quantization of single-electron transistor below 10nm

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

Quantization of Charge Carriers in Conduction Channels of Si-Based Field-Effect Transistors for Multinary Computation

Macromodeling of realistic single electron transistors for large scale circuit simulation

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Monte Carlo Simulation and Macro-Model of Single-Electron Transistor

Multiple-Gate FET Quantum Dot Behavior and a Proximity Charge Sensing Model

Simulation and machine learning based analytical study of single electron transistor (SET)

Quantum Conductance of the Single Electron Transistor

Transport Characteristics of Si-Based Single-Electron Transistors Having a High Gate Modulation Factor

Coulomb Blockade Oscillations in Silicon Single-electron Transistor with a Strong Gate-dot Coupling

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Simulations of hybrid charge-sensing single-electron-transistors and CMOS circuits

Coulomb Staircases and Differential Conductance Oscillations in A Simox-Based Single-Electron Transistor

Fabrication and Characterization of a Single Electron Transistor Based on a Silicon-on-Insulator

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Characterization of Single-Electron Tunneling Transistors for Designing Low-Power Embedded Systems

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Resonant tunneling in a colloidal CdS semiconductor quantum-dot single-electron transistor based on heteroepitaxial-spherical Au/Pt nanogap electrodes

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Unusual Conductance Characteristics in Single Electron Transistor