Abstract:Engineering materials at the nanoscale by combining controlled nanomaterial synthesis and directed assembly methods offers the potential to create new electronic and optical devices with improved performance and functionality. Semiconductor nanowires have been of particular interest as a model system for studying new physical phenomena arising from their scaled geometries as well as for applications in high performance vertical transistors, thin film electronic, electro-optical, and sensing devices and circuits. However, the use of relatively immature nanowire growth, in-situ doping, and device integration processes have made it difficult to elucidate and compare the electrical transport properties across different device platforms (e.g., nanowire versus planar) and length scales. This talk will describe recent results showing that thermally-oxidized in-situ axially-doped n+-p--n+ and p+-n--p+ silicon nanowires (20 to 50 run in diameter) grown by the vapor-liquid-solid technique can be used to fabricate stable and reproducible n- and p-channel top-gate and wrap-around-gate field effect transistors (FETs) that operate by inversion ofthe channel and have both high on-state current (Ion) and on/off-state current ratio (Ion/Ioff). Control measurements using back-gated device structures that separately probe the properties of the heavily-doped source/drain regions and lightly-doped channel region confirm that radial thin film deposition on the channel is prevented during vapor-liquid-solid growth of the second heavily-doped nanowire segment, which is necessary for fabricating complementary field effect transistors using these silicon nanowires. The effective mobility estimated from the measured channel resistance of n+-p--n+ and p+-n--p+ silicon nanowire FETs having 1 ?m-long channels will be provided and related to planar devices. Finally, the properties of the top-gate and wrap-around-gate n- and p-channel silicon nanowire FETs will be compared as a function of global back gate bias.

Dual gate controlled single electron effect in silicon nanowire transistors

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Top-gated field effect devices using oxidized silicon nanowires

A simple and controlled single electron transistor based on doping modulation in silicon nanowires

Si Nanowire - Array Source Gated Transistors

A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching

In situ axially doped n-channel silicon nanowire field-effect transistors.

Effects of Quantized Energy Levels of QDs Confined in Asymmetric Barriers Within Silicon Nanowire Transistor

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Electronic transport characteristics in silicon nanotube field-effect transistors

Axially-doped n+-p−-n+ and p+-n−-p+ silicon nanowires: vapor-liquid-solid growth and field effect transistor characterization

New Observation On Gate-Induced Drain Leakage In Silicon Nanowire Transistors With Epi-Free Cmos Compatible Technology On Soi Substrate

Fabricating a Silicon Nanowire by Using the Proximity Effect in Electron Beam Lithography for Investigation of the Coulomb Blockade Effect

The Emergence of a Coupled Quantum Dot Array in a Doped Silicon Nanowire Gated by Ultrahigh Density Top Gate Electrodes

Electronic Transport Properties of Silicon Junctionless Nanowire Transistors Fabricated by Femtosecond Laser Direct Writing

Silicon Single Electron Transistors Aiming at a High Gate Modulation Factor

Gate-Modulated Transport Properties and Mechanism for Nanowire Cross Junction Based on Sno2 Semiconductor

Electrical Transport of Bottom-Up Grown Single-Crystal Si1−xGexnanowire

Fabrication of nano-structure and study of Si-based single electron transistor

Steady and Transient Properties of Side-Gated Nano-Transistors

Transport Through Dopant Atom Arrays in Silicon Junctionless Nanowire Transistor