Abstract:Bias-voltage and temperature-dependent Coulomb oscillations are demonstrated in long-channel (similar to 1500 nm) single-walled carbon-nanotube-based field-effect transistors. The oscillation peaks disappear gradually with increasing temperatures up to 70 K. Diamond-shaped channel current suppression regions are observed at 15 K when the current is plotted with contour lines in the gate voltage versus source-drain voltage plane. Interestingly, these characteristics are only found in one kind of carbon-nanotube-based field-effect transistors, in which a long single-walled carbon-nanotube bundle bridges the source/drain electrodes, while several short single-walled carbon-nanotube bundles are attached to the source/drain contacts. The long-tube channel may act as an electrometer to detect single-charge charging signals in the short single-walled carbon nanotubes. On one hand, charges trapped in the short tubes could be quantized due to the Coulomb blockade. On the other hand, the electrostatic potential at the long-tube/electrodes contacts could be influenced by the quantum charges stored in the short single-walled carbon nanotubes so that the channel current is modulated.

Interpretation of Coulomb Oscillations in Carbon-Nanotube-based Field-Effect Transistors

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Investigation on self-heating effect in carbon nanotube field-effect transistors

Coulomb Oscillations Effect in Dual Gate Controlled Silicon Nanowire

Self-driven oscillation in Coulomb blockaded suspended carbon nanotubes

Temperature Dependence of Electronic Behaviors in N-Type Multiple-Channel Junctionless Transistors

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors

Ab Initio Modeling of Ecosystems with Artificial Life

Superconductivity-enhanced bias spectroscopy in carbon nanotube quantum dots

Geometry and Temperature Effects on the Threshold Voltage Characteristics of Silicon Nanowire MOS Transistors

Nanotube and Nanowire Transistors

Carbon-Nanotube-Based Single-Electron/Hole Transistors

Photo-thermal Self-oscillations in Cavity-Coupled Carbon Nanotube pn-Devices

Observation of Coulomb-blockade in a field-effect transistor with silicon nanocrystal floating gate at room temperature

Hooge'S Constant For Carbon Nanotube Field Effect Transistors

Interference effects in electronic transport through metallic single-wall carbon nanotubes

Coulomb Oscillations Of Indium-Doped Zno Nanowire Transistors In A Magnetic Field

Ionic Coulomb blockade controls the current in a short narrow carbon nanotube

Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors.

Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts

Multiple Functionality in Nanotube Transistors