Charging/Discharging of Silicon Nanocrystals Embedded in an Sio2 Matrix Inducing Reduction/Recovery in the Total Capacitance and Tunneling Current

CY Ng,Y Liu,TP Chen,MS Tse
DOI: https://doi.org/10.1088/0964-1726/15/1/008
IF: 4.1
2006-01-01
Smart Materials and Structures
Abstract:In this work, we have found that the charging of Si nanocrystals (nc-Si) distributed throughout a thin gate oxide can induce a reduction in the total gate oxide capacitance and tunneling current. The capacitance call be reduced to an extremely low value if the nanocrystals are charged up. The gate oxide current is also found to decrease dramatically if the nanocrystals are charged Lip. The reduction in both the capacitance and the current caused by the charging in the nanocrystals is found to be fully recoverable under In ultraviolet (UV) light illumination for 5 min or a thermal annealing at a temperature of 100 degrees C for 10 min. The reduction and recovery of the capacitance due to the charging and discharging in the nanocrystals are explained with an equivalent circuit model.
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