Abstract:Since the introduction of fast integrated circuits, semiconductor manufacturers have concentrated their efforts on reducing the size of transistors. Increased working frequencies (shorter transistors) and decreased power consumption are the goals of circuit designers working on large-scale production costs (with the lowering of supply voltage). Short channel effects (SCEs) are a side effect of transistor shrinkage. While reducing gate oxide thickness in downscaled devices, gate stack engineering is an approach that directs to an increase in leakage current (quantum tunnelling effect). SiO 2 's application as gate insulation is anticipated to result in a gradual increase in tunnelling leakage current. As a result, the market has witnessed an increase in innovative device architectures as Fin field effect transistors (FinFET). Nanosheets is a cutting-edge method that overcomes FinFET's constraints. In this study, sub-nm junction-less Gate Stack Silicon-on-Insulator (SOI) nanosheet FinFETs (NS FinFET) for both low and high levels of doping are examined. From doping concentration (ND) range of 10 16 cm-3 to 10 19 cm-3, the comprehensive DC performance evaluation is examined, including transfer characteristics, output characteristics, subthreshold swing (SS), drain induced barrier lowering (DIBL), and ION/IOFF ratio. The proposed Junction less FinFET produces better switching characteristics with IOFF getting less than nA for all the doping ranges. Furthermore, dynamic power and power consumption of the proposed JLFET is investigated. It shows paradigm shift for the semiconductor industries for low-power and high-performance applications at sub-nm region.

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