Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

Analysis Of Single-Event Effects In Selected Box-Based Fdsoi Transistor And Inverter

Concurrent Analysis of Self-Heating Effect and Thermal Stress in Partially Insulated Field Effect Transistors (Pifets)

Electrothermal characterization of SOI FinFETs

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

Simulation of Location and Size Effects on Performance Adjustment in Hybrid N-type MOSFETs

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

TCAD SIMULATION OF SELBOX AND DSOI CMOS SRAM FAILURE

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Simulation Study of Single Event Effects in the SiC LDMOS with a Step Compound Drift Region

The Heat Dissipation Path of Self-Heating Effects for the SOI MOSFET by Considering the BOX Layer and the TiN Barrier Layer

Static power characteristics of selective buried oxide CMOS devices

Single-Event Double Transients in Inverter Chains Designed with Different Transistor Widths

Sentaurus TCAD simulation of SET and Radiation-Hardened technology for FDSOI TFET devices

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Heat dissipation path of self-heating effect for SOI MOSFET considering BOX layer and TiN barrier layer

Analysis and Optimization of SDOI Structure to Maximize the Intrinsic Performance of Extremely Scaled MOSFETs

Drain and Source on Insulator MOSFETs Fabricated by Local SIMOX Technology

Investigation of Self-Heating Effect in SOI Tunnel Field-Effect Transistor

Analysis of Thermal Resistance Considering Self-Heating Effects and Ambient Temperature Coupling for Double-SOI MOSFETs

Primary Single Event Effect Studies on Xilinx 28-Nm System-on-Chip (Soc)

Analysis of a High-Performance Ultra-Thin Body Ultra-Thin Box Silicon-on-insulator MOSFET with the Lateral Dual-Gates: Featuring the Suppression of the DIBL