Abstract:With device scaling-down, circuits appear more susceptible to transient faults especially for the bulk silicon process. Thus, FD-SOI technology has been widely popular in serious radiation environment due to its high radiation-tolerance inherence created by an additional BOX layer. In this work, seven different inverter chains with two kinds of core voltages, four kinds of channel areas and a stack inverter chain are designed to investigate the SET in advanced 22 nm FD-SOI CMOS technology. A NAND chain is also designed and used for comparison with inverter chains. The sensitivities of diverse SET targets are characterized with different core voltages and heavy-ion tilts. Results showed that the inverter size and the driving current can dominate the occurrence and width distribution of transient pulses. Besides, heavy-ion strike angle, LET, and charge sharing can also affect the pulse width. Though a high LET can deposit adequate energy, the widest pulses are measured in low-LET 84 Kr ion irradiation, rather than in high-LET ions' irradiation, which are attributed to the pulse quenching effect and being investigated by Hspice simulation. The LET dependency and low voltage induced SET widening are all observed in irradiation tests and verified by circuit-level pulse injection. All of the SET sensitive targets are distinguished. The results are highly effective for the designers to suppress and correct the SET-oriented errors to achieve a radiation robust system.

Sentaurus TCAD simulation of SET and Radiation-Hardened technology for FDSOI TFET devices

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Heavy ion induced single-event-transient effects in nanoscale ferroelectric vertical tunneling transistors by TCAD simulation

Analysis Of Single-Event Effects In Selected Box-Based Fdsoi Transistor And Inverter

The SEE Hardening Technologies for 16 Nm FinFET

Characterization of Single Event Upsets of Nanoscale FDSOI Circuits Based on the Simulation and Irradiation Results

Characterization of Heavy Ion Induced SET Features in 22-Nm FD-SOI Testing Circuits

Evaluation of Single-Event-Transient Effects in Reconfigurable Field Effect Transistor Beyond 3 Nm Technology Node

Radiation Hardened by Design Techniques to Mitigating P-Hit Single Event Transient

Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

Layout Based Radiation Hardening Techniques Against Single-Event Transient

A Comprehensive Review of Single Event Transients on Various MOS Devices

Investigation of Radiation Effects on FD-SOI Hall Sensors by TCAD Simulations

An Effective Method to Compensate Total Ionizing Dose-Induced Degradation on Double-SOI Structure

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Designing of Tunnel FET and FinFET using Sentaurus TCAD and Finding their Characteristics

Numerical Study on a Lateral Double-Gate Tunnelling Field Effect Transistor

Simulation-Based Analysis of Ultra Thin-Body Double Gate Ferroelectric TFET for an Enhanced Electric Performance

Research on High-Dose-Rate Transient Ionizing Radiation Effect in Nano-Scale FDSOI Flip-Flops