Abstract:In this work, we have comprehensively investigated the degradation behaviors and mechanism of 1.2 kV silicon carbide (SiC) metal oxide semiconductor field-effect transistors (MOSFETs) under repetitive surge current stress. The experimental results show that the negative drift of threshold voltage ( ) is related to the gate turn-off voltage and the surge current. The gate leakage current ( ) increases by about one order of magnitude after the stress. The deterioration of the electrical parameters is considered to be the gate oxide degradation associated with the increase of SiC/SiO2 interface traps. By using the low-frequency noise (LFN) technique, it is demonstrated that the trap density of the device with the most severe degradation after the stress becomes 3.5 times the initial one. On the other hand, we observed that the voltage drop ( ) of the body diode and on-resistance ( ) increased. It is attributed to the cumulative degradation process of package with the appearance of fatigue in the bond wire induced by the thermo-mechanical stress during the surge test. This work can serve as a valuable reference for the reliability of SiC MOSFETs.

Correlation Between MR-DCIV Current and High-Voltage-stress-induced Degradation in LDMOSFETs

Insights into Stress-Induced Degradation of STI-based LDMOSFETs by MR-DCIV Spectroscopy

Understanding the correlation of HCI and NBTI degradation in pLDMOSFETs from MR-DCIV technique

Electrothermal-Stress Interactions of LDMOS FET Induced by DCI RF-Pulses

Hot-carrier-induced On-Resistance Degradation of Step Gate Oxide NLDMOS

High temperature behavior of multi-region direct current current–voltage spectroscopy and relationship with shallow-trench-isolation-based high-voltage laterally diffused metal–oxide–semiconductor field-effect-transistors reliability

Research of Hot-carrier-induced Degradation on SOI NLIGBT

Off-state Avalanche Breakdown Induced Degradation in 20 V NLDMOS Devices

Physical Study of Low-frequency TDDB Lifetime Deterioration in Advanced FinFETs

The Hot-Carrier-Induced Degradation of Soi Ligbt under Ac Stress Conditions

NBTI degradation in STI-based LDMOSFETs.

A Multi-Region Trap Characterization Method and Its Reliability Application on STI-based High-Voltage LDMOSFETs

Understanding of Self-Heating Enhanced Degradation in Pldmosfets by MR-DCIV Method

Correlation between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress test

Layout dependent hot-carrier-injection-induced pLDMOS degradation from a non-destructive characterization viewpoint

Multiregion DCIV: A Sensitive Tool for Characterizing the $\hbox{Si/SiO}_{2}$ Interfaces in LDMOSFETs

Understanding of HCI degradation temperature dependence in SOI STI-pLDMOSFETs from MR-DCIV spectroscopy

Clear Correspondence Between Gated-Diode R-G Current and Performance Degradation of Soi N-Mosfets after F-N Stress Tests

Experimental insights on the degradation and recovery of pMOSFET under non-uniform NBTI stresses

Study of the Degradation in LDMOS with STI Technology and Improve the Reliability with Several Methods

Degradation Evaluation and Defects Analysis for 1.2-kV Planar-Gate SiC MOSFETs Under Repetitive Surge Current Stress