Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

Statistical Observations of Three Co-Existing NBTI Behaviors in 28 Nm HKMG by On-Chip Monitor with Less Recovery Impact.

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Challenge and Solution for Characterizing NBTI-generated Defects in Nanoscale Devices

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

A monitoring circuit for NBTI degradation at 65nm technology node

NBTI Mitigation by Optimized HKMG Thermal Processing in a FinFET Technology

Investigations of Nbti by Conventional and New Measurement Methods for P-Mosfets

Evaluation of MOS Interface Trap Generation after BTI Stress Using Flicker Noise

NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

NBTI-Generated Defects in Nanoscaled Devices: Fast Characterization Methodology and Modeling

Intrinsic correlation between PBTI and TDDB degradations in nMOS HK/MG dielectrics

Experimental Study on the Variation of NBTI Degradation in Nano-Scaled High-K/metal-gate PFETs

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

CMOS NBTI Degradation and Recovery Behaviors in a Wide Temperature Range

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Recovery Behavior of Interface Traps After Negative Bias Temperature Instability Stress in p-FinFETs Featuring Fast Trap Characterization Technique