Abstract:Our recent investigations and understanding of the negative bias temperature instability (NBTI) degradation in p-MOSFETs with ultrathin SiON gate dielectric are reviewed. The progressive understanding of NBTI mechanism is mainly related to the novel measurement techniques we developed. We show in this paper the following: 1) For the conventional charge pumping and direct-current current-voltage interface trap measurement, the interface trap density Nit is underestimated due to the recovery during measurement delay. The existing Nit data should be reexamined; 2) an ultrafast pulsed I-V method [fast pulsed measurement (FPM)] is developed to measure DeltaVth with measurement time tM = 100 ns. It can be considered as free from recovery during measurement; 3) due to the degradation during the initial threshold voltage measurement, the existing slow on-the-fly (OTF) DeltaVth measurement distorts (overestimates) the slope and induces a kink at early stress time in the Log-Log curve of the time evolution of NBTI degradation. A fast OTF DeltaVth measurement method is developed to overcome this problem; 4) a novel OTF interface trap (OFIT) measurement method is developed which is free from interface trap recovery during measurement. The OFIT measurement provides the most reliable data to inspect the interface trap R-D model; 5) combining the OFIT and FPM measurements, we decompose the NBTI DeltaVth into two components: A slow DeltaVth it component contributed by with a slow recovery time longer than 50mus and a fast DeltaVth ox component contributed by DeltaVox with a broad spectrum of recovery time, including a component with very fast recovery time (100 ns); and 6) the dynamic degradation by DeltaVth it component is frequency-independent and can be measured by a dc method, whereas the dynamic degradation DeltaVth ox by component measured by FPM is increased by increasing frequency. The ten-year lifetime of the p-MOSFETs is mainly determined by the degradation of the DeltaVth it component.

On the Understanding of Defects in Short-Term Negative Bias Temperature Instability (NBTI) for Sub-20-nm DRAM Technology

Sub-20-nm DRAM Technology under Negative Bias Temperature Instability (NBTI): from Characterization to Physical Origin Identification

Factors for Negative Bias Temperature Instability Improvement in Deep Sub-Micron CMOS Technology

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Challenge and Solution for Characterizing NBTI-generated Defects in Nanoscale Devices

Understand NBTI Mechanism by Developing Novel Measurement Techniques

Investigation on NBTI-induced dynamic variability in nanoscale CMOS devices: Modeling, experimental evidence, and impact on circuits.

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Investigation of Positive Bias Temperature Instability in Advanced FinFET Nodes

On the Understanding of pMOS NBTI Degradation in Advance Nodes: Characterization, Modeling, and Exploration on the Physical Origin of Defects

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors

NBTI-related issues in deep submicron pMOSFETs

Defects for Random Telegraph Noise and Negative Bias Temperature Instability

Statistical Observations of Three Co-Existing NBTI Behaviors in 28 Nm HKMG by On-Chip Monitor with Less Recovery Impact.

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-Nm DRAM Node—Part I: Defect-Based Statistical Compact Model

Drain Bias Effect on the Interface Traps of Pmosfets under Negative Bias Temperature Stress

A novel negative bias temperature instability model for nanoscale finfet

On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Evaluation of negative bias temperature instability in ultra-thin gate oxide pMOSFETs using a new on-line PDO method

Understanding Retention Time Distribution in Buried-Channel-Array-Transistors (BCAT) under Sub-20-nm DRAM Node—Part II: PBTI Aging and Optimization

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation