Impacts of Channel Doping on NBTI Reliability and Variability in Nanoscale FinFETs

Zhe Zhang,Runsheng Wang,Yangyuan Wang,Ru Huang

DOI: https://doi.org/10.1109/ipfa47161.2019.8984834

2019-01-01

Abstract:In this paper, the channel doping concentration (N ch ) dependence of negative bias temperature instability (NBTI) reliability and variability is comprehensively studied using `atomistic' TCAD simulations. The ΔV th distributions and current density distributions at different N ch are investigated. It is helpful for understanding of NBTI degradation in nanoscale devices.