Abstract:Aging effects in digital circuits change the switching characteristics of their transistors, resulting in timing violations that can lead to functional errors at the system level. In particular, bias temperature instability (BTI) is a degradation effect that changes the threshold voltage of transistors. Its effect is more prevalent as the scaling of transistor dimensions progresses. In this work, we present a method to enable defect-centric long-term modeling of BTI degradation that takes into account the effects of concrete workloads at the processor data path level. Based on this study, we propose a novel design flow to link the impact of BTI degradation at the transistor ( ${Delta {}V_{text {th}}}$ ), processor data path (e.g., maximum frequency) and application-functionality levels. This flow may be used to improve system correctness over the entire device lifetime, avoiding unsafe working points, or to achieve a graceful degradation of system characteristics. Our design flow is applicable to all types of digital circuits, including high-performance processors. However, in this specific work we focus on the domain of biosignal processing applications for wireless body sensor networks (WBSNs), the pseudoperiodic nature of which interacts with the partially recoverable nature of BTI. Our results in this domain show, for a 32-nm implementation, a variation of up to 54.6 mV in the threshold voltage of the circuit transistors after one year of continuous operation, with an impact of 8.4% in the maximum safe operating frequency. Such effects are expected to strongly worsen for longer lifetimes and more scaled technology nodes.

A Framework for Estimating NBTI Degradation of Microarchitectural Components

New-Age : A Negative Bias Temperature Instability-Estimation Framework for Microarchitectural Components

Software Tools for Analyzing NBTI-induced Digital Circuit Degradation

Analysis of Functional Errors Produced by Long-Term Workload-Dependent BTI Degradation in Ultralow Power Processors

Process Variation and Temperature-Aware Reliability Management

A Statistical Framework for Post-Fabrication Oxide Breakdown Reliability Prediction and Management

Sensor-Driven Reliability and Wearout Management

A Cross-Layer Framework for Early-Stage Full Chip Oxide Breakdown Reliability Analysis

Understanding NBTI-induced Dynamic Variability in the Nano-Reliability Era: from Devices to Circuits

New Insights into the Design for End-of-life Variability of NBTI in Scaled High-Κ/metal-gate Technology for the Nano-Reliability Era

NBTI-aware Statistical Circuit Delay Assessment

A Machine Learning Based Reliability Analysis of Negative Bias Temperature Instability (NBTI) Compliant Design for Ultra Large Scale Digital Integrated Circuit

Assessment of Circuit Optimization Techniques Under NBTI

Combating NBTI-induced aging in data caches.

Proactive Nbti Mitigation for Busy Functional Units in Out-Of-Order Microprocessors

On BTI Aging Rejuvenation in Memory Address Decoders

Modeling Analysis of BTI-driven degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

Novel Critical Gate-Based Circuit Path-Level NBTI-Aware Aging Circuit Degradation Prediction.

Temperature-aware NBTI Modeling and the Impact of Input Vector Control on Performance Degradation

Temperature-Aware NBTI Modeling Techniques in Digital Circuits.

A Device-Circuit Aging Simulation Framework Integrating Trap-Based Models and Sensitivity Analysis for FinFET Technology