A Cross-Layer Framework for Early-Stage Full Chip Oxide Breakdown Reliability Analysis

Cheng Zhuo
DOI: https://doi.org/10.1109/icsict.2016.7998947
2016-01-01
Abstract:With continuously growing integration density and decreasing feature size, chip reliability, especially oxide breakdown (OBD) reliability is a concerning topic for chip designers. In the past, architects have to assume either worst case workload or maximum supply level to assess chip OBD reliability, which is easily pessimistic and induces unnecessary back-tracking in the design flow. In this paper, we present a cross-layer framework to enable more accurate OBD reliability assessment under actual workload and actual supply noise. The framework is capable of incorporating models at different design layers from architecture to circuit as a whole for fast and real-time reliability simulation. The experimental results show that the proposed framework can capture the actual degradation trend w.r.t. workload and supply level, and help reduce up to 90%design pessimism on lifetime estimation.
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