Abstract:The embedded SiGe source/drain (S/D) stressor applies the lattice mismatch between silicon and germanium atoms making silicon channel generate compressive strain in the surface channel. The compressive strain enhances hole mobility due to raising the weighting factor of the light hole contribution, causing the improvement of the pMOSFETs performance. Previous reports have investigated the effects of pMOSFETs with embedded SiGe S/D stressor. But, devices incorporated with biaxial strain and embedded SiGe S/D have not been clearly investigated. In this work, not only were the characteristics of devices containing biaxial strain and embedded SiGe S/D stressor with different channel lengths exposed, but the channel-hot-carrier (CHC) effect in short-channel pMOSFETs was also followed with interest. The experimental results show that the biaxial strain achieved higher carrier mobility in long channel. However, this strain reduces its mobility enhancement effect when the channel length becomes shorter. In addition, the embedded SiGe S/D stressor enhances the carrier mobility by increasing compressive strain in the short channel. After the CHC test for pMOSFETs with these two processes, the saturation current of the embedded SiGe S/D pMOSFETs degraded 5.5%, which was more serious than 4.2% degradation of biaxial-strain devices. It is presumable that embedded SiGe S/D strain induces more interface states or trap generation located at source/drain junction.

Electrical Properties of Strained Si P-N Junctions

Comparative Study on Strain Induced Electrical Properties Modulation of Si P-N Junctions

Mechanical Strain Altered Gate and Substrate Currents in N and P-Channel MOSFETs

Strain-induced I-V characteristics modulation of p-n junctions and MOS capacitors in Si CMOS devices

Mechanical Tensile Strain Induced Gate and Substrate Currents Change in N and P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors

Comprehensive Study of NBTI under Compressive and Tensile Strain

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Electrical properties and temperature behavior of strained-Si N-MOSFETs

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

Experimental Study on Nbti Degradation Behaviors in Si Pmosfets under Compressive and Tensile Strains

A study of strain-induced indirect-direct bandgap transition for silicon nanowire applications

Origin of Current Variations in Ultrathin Bipolar Junction Transistors Under Bending Stress

Strained Pmosfets With Sige Channel And Embedded Sige Source/Drain Stressor Under Heating And Hot-Carrier Stresses

Piezojunction effect in heterojunctions under external bias for ultrasensitive strain sensing

Characteristics and hot-carrier effects of strained pMOSFETs with SiGe channel and embedded SiGe source/drain stressors

Fully Tensile Strained Partial Silicon-on-insulator N-Type Lateral-Double-diffused Metal-Oxide-semiconductor Field Effect Transistor Using Localized Contact Etching Stop Layers

Impacts of Additive Uniaxial Strain on Hole Mobility in Bulk Si and Strained-Si P-Mosfets

Strain Modulated Electronic Properties of Silicon Nanoribbons with Armchair Edges

Strain-induced effects on band-to-band tunnelling and trap-assisted tunnelling in Si examined by experiment and theory

Mechanical stress dependence of the Fermi level pinning on an oxidized silicon surface

Impact of Strain on Radio Frequency Characteristics of Flexible Microwave Single-Crystalline Silicon Nanomembrane P-Intrinsic-N Diodes on Plastic Substrates