Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

A New Correction Model for Quantum Mechanical Effects in MOS Structure

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

Subband Structure And 2d Density-Of-States Analysis Of Quantized Inversion Layer In Mos Structure

Experimental Study on Hole and Electron Effective Masses in Inversion Layers of Ge (100), (110) and (111) P- and N-Mosfets

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

MOS Structure Charge Control Model Based on Surface Layer Effective Density-of-States

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Statistical Analysis of Quantized Inversion Layer in MOS Devices with Ultra-Thin Gate Oxide and High Substrate Doping Levels

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer