Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model for the metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression. Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-/spl mu/m effective gate length and the accuracy of the model are demonstrated.

A New Correction Model for Quantum Mechanical Effects in MOS Structure

A new charge model including quantum mechanical effects in MOS structure inversion layer

MOS Structure Charge Control Model Based on Surface Layer Effective Density-of-States

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

Surface layer effective density-of-states (SLEDOS) and its applications in MOS devices modeling

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

Simulation of Advanced N-Mosfet Emphasizing Quantum Mechanical Effects on 2-D Characteristics

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Subband Structure And 2d Density-Of-States Analysis Of Quantized Inversion Layer In Mos Structure

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Threshold voltage correction model for quantum short channel

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs