Abstract:A new analytical current-voltage (I-V) model for submicrometer and deep-submicrometer metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed based on a newly developed charge-control model in metal-oxide-semiconductor structure. Threshold-voltage shift due to quantum mechanical effects, finite inversion layer thickness effects (inversion layer capacitance), as well as increased depletion layer charge density after the strong inversion point are incorporated in the model. Inversion layer charge density with respect to the gate voltage from depletion through weak inversion to strong inversion regions with smooth transition between different regions is given by one expression, Two-dimensional short channel effects such as channel length modulation, drain-induced barrier lowering, mobility degradation, and carrier velocity saturation, as well as polysilicon depletion effects are included in the I-V model. Model results are compared with both numerical results of carrier sheet density and surface potential in the channel, and experimental results of I-V data for submicrometer and deep-submicrometer MOSFETs down to 0.09-mum effective gate length and the accuracy of the model are demonstrated.

A new charge model including quantum mechanical effects in MOS structure inversion layer

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

A New Correction Model for Quantum Mechanical Effects in MOS Structure

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

MOS Structure Charge Control Model Based on Surface Layer Effective Density-of-States

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

Analytical Charge-Control and I-V Model for Submicrometer and Deep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Subband Structure And 2d Density-Of-States Analysis Of Quantized Inversion Layer In Mos Structure

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

A Charge Based Non-Quasi-Static Transient Model for Soi Mosfets

A Unified Charge-Based Model for SOI MOSFETs Applicable from Intrinsic to Heavily Doped Channel

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling