Abstract:A comprehensive numerical model of electron mobility of nanoscale symmetric, asymmetric DG MOSFETs, and independent Double-Gate (DG) MOSFETs is studied in this paper. Physically derived expressions for electron mobility, including phonon and surface roughness scattering, two most important scattering mechanisms in DG MOSFETs around room temperature, are presented, based on a numerical analytic solution to potential and carrier distribution in DG MOSFETs from accumulation to strong inversion region. A careful description of electron mobility dependence on structure parameters, temperature and effective vertical field is performed and analyzed. Simulation results indicate that for symmetric devices in dependent mode, oxide thickness only slightly affects mobility and increasing temperature monotonically decreases mobility while mobility dependence on silicon film can be complicated, strongly moderated by "volume inversion" and geometric restriction. Study also shows that for asymmetric devices in dependent mode, thicker oxide leads to higher mobility. Symmetric DG MOSFETs biased in independent mode show that mobility is controlled by both electron density induced by one gate and mobility in this set of electrons. The presented model leads to a more clear understanding on DG MOSFETs device physics and provides useful results to modeling development for circuit simulation.

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Charge-Based Model for Symmetric Double-Gate Mosfets with Inclusion of Channel Doping Effect

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

A Non-Charge-Sheet Based Analytical Model of Undoped Symmetric Double-Gate MOSFETs Using SPP Approach.

Numerical Electron Mobility Model of Nanoscale Symmetric, Asymmetric and Independent Double-Gate Mosfets

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

A Unified Charge Model Comprising Both 2D Quantum Mechanical Effects in Channels and in Poly-Silicon Gates of MOSFETs

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

Quasi-2D Compact Modeling for Double-Gate MOSFET

Analytical Charge-Control and I-V Model for Submicrometer Anddeep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

An analytic potential-based model for undoped nanoscale surrounding-gate MOSFETs

Quantum modeling for nanoscale double gate MOSFETs based on Green's function

Short-Channel-Effect Modeling of Dg-Fets Using Voltage-Doping Transformation Featuring Fd/Pd Modes

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

A carrier-based analytic model for undoped surrounding-gate MOSFETs

A new charge model including quantum mechanical effects in MOS structure inversion layer

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer