Abstract:As the device channel length keeps shrunk from several tens nanometers to a few nanometers, it has been commonly agreed upon that the multi-gate structure (including FinFET) is an effective means for improving the device Ion/Ioff ratio. For many years, the effects of quantum mechanics (QM) on the carrier distribution and transport in MOSFETs have been recognized and studied. When the cross-section of a channel is confined to an order of a few nanometers, a more fundamental issue in solid-state physics arises. That is, the dependence of bandstructure or electronic structure on the geometry of the material can no longer be ignored and has non-negligible effects on device characteristics. In this paper, the efficient calculation of bandstructure in the channel region using the first principles is discussed. The electrical characteristics of devices are obtained through the solution of Schrodinger equation with open boundary conditions, based on the carrier transport parameters (such as effective mass and mobility) from bandstructure calculation. The relationship between carrier mobilities and the crystal orientation is also studied, taking into consideration the stress effects on the bandstructure and scattering mechanisms.

Subband Structure And 2d Density-Of-States Analysis Of Quantized Inversion Layer In Mos Structure

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

Statistical Analysis of Quantized Inversion Layer in MOS Devices with Ultra-Thin Gate Oxide and High Substrate Doping Levels

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

C-VCharacterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

A New Correction Model for Quantum Mechanical Effects in MOS Structure

Scattering Mechanisms in Inversion Layers of Ge MOSFETs: Impact of Surface States and Carrier Effective Masses

A discussion on the universality of inversion layer mobility in MOSFET's

Thorough Analysis of Quantum Mechanical Effects on Mos Structure Characteristics in Threshold Region

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer

MOS Structure Threshold Voltage Model by Rigorously Considering Quantum Mechanical Effect

MOS Structure Charge Control Model Based on Surface Layer Effective Density-of-States

Device Simulation of Nano-Scale MOSFETs Based on Bandstructure Calculation

Quantum Mechanical Consideration On Mosfet'S Characteristics And Scaling

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

Analytical Quantum Modeling of Inversion Charge Density for Nanoscale Undoped Symmetric DG-MOSFETs

Carrier Distribution And Threshold Voltage Model In N- And P-Mosfet