Abstract: The interactions between electrons and lattice vibrational modes play the key role in determining the carrier transport properties, thermoelectric performance and other physical quantities related to phonons in semiconductors. However, for two-dimensional (2D) materials, the widely-used models for carrier transport only consider the interactions between electrons and some specific phonon modes, which usually leads to inaccruate predictions of electrons/phonons transport properties. In this work, comprehensive investigations on full electron-phonon couplings and their influences on carrier mobility and thermoelectric performances of 2D group-IV and V elemental monolayers were performed, and we also analyzed in details the selection rules on electron-phonon couplings using group-theory arguments. Our calculations revealed that, for the cases of shallow dopings where only intravalley scatterings are allowed, the contributions from optical phonon modes are significantly larger than those from acoustic phonon modes in group-IV elemental monolayers, and LA and some specific optical phonon modes contribute significantly to the total intravalley scatterings. When the doping increases and intervalley scatterings are allowed, the intervalley scatterings are much stronger than intravalley scatterings, and ZA/TA/LO phonon modes dominate the intervalley scatterings in monolayer Si, Ge and Sn. The dominant contributions to the total intervalley scatterings are ZA/TO in monolayer P, ZA/TO in monolayer As and TO/LO in monolayer Sb. Based on the thorough investigations on the full electron-phonon couplings, we predict accurately the carrier mobilities and thermoelectric figure of merits in these two elemental crystals, and reveal significant reductions when compared with the calculations based on the widely-used simplified model.

Validity and applicability of triangular potential well approximation in modeling of MOS structure inversion and accumulation layer

A New Method To Investigate Quantum Mechanical Effects In Mos Structure Strong Inversion Layer

Characterization and Modelling of Carrier Distribution and Gate Capacitance in MOS Structure Inversion Layer

A New Charge Model Including Quantum Mechanical Effects in MOS Structure Inversion Layer

Fully Analytical Carrier-Based Charge and Capacitance Model for Hetero-Gate-Dielectric Tunneling Field-Effect Transistors

MOS device threshold voltage model considering quantum mechanical effect including multi-subband occupation

Towards Accurate Predictions of Carrier Mobilities and Thermoelectric Performances in 2D Materials

A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

A discussion on the universality of inversion layer mobility in MOSFET's

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

New Strategy of Modeling Inversion Layer Characteristics in MOS Structure for ULSI Applications

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

A Universal Electron Mobility Model of Strained Si MOSFETs Based on Variational Wave Functions

A carrier-based analytic model for undoped surrounding-gate MOSFETs

A New Correction Model for Quantum Mechanical Effects in MOS Structure

A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling

Analytic yet continuous surface potential versus voltage equation of intrinsic nanoscale surrounding-gate MOSFETs and solution from accumulation to strong inversion region

A Physics-Based Analytic Solution to the MOSFET Surface Potential from Accumulation to Strong-Inversion Region

An analytic surface potential based non-charge-sheet poly-Si TFT model including substrate and film thickness effects

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs