Abstract:The continued scaling-down of nanoscale semiconductor devices has made it very challenging to obtain analytic surface potential solutions from complex equations in physics, which is the fundamental purpose of the MOSFET compact model. In this work, we proposed a general framework to automatically derive analytical solutions for surface potential in MOSFET, by leveraging the universal approximation power of deep neural networks. Our framework incorporated a physical-relation-neural-network (PRNN) to learn side-by-side from a general-purpose numerical simulator in handling complex equations of mathematical physics, and then instilled the "knowledge'' from the simulation data into the neural network, so as to generate an accurate closed-form mapping between device parameters and surface potential. Inherently, the surface potential was able to reflect the numerical solution of a two-dimensional (2D) Poisson equation, surpassing the limits of traditional 1D Poisson equation solutions, thus better illustrating the physical characteristics of scaling devices. We obtained promising results in inferring the analytic surface potential of MOSFET, and in applying the derived potential function to the building of 130 nm MOSFET compact models and circuit simulation. Such an efficient framework with accurate prediction of device performances demonstrates its potential in device optimization and circuit design.

A new analytical method for modeling a 2D electrostatic potential in MOS devices, applicable to compact modeling

A 2-D Analytical Potential Model for the Oxide Layer and Space Charge Region of MOSFETs in Subthreshold

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

A new analytical model for junctionless cylindrical surrounding-gate MOSFETs

A non-charge-sheet analytic theory for undoped symmetric double-gate MOSFETs from the exact solution of Poisson's equation using SPP approach

Analytical Model for the Surrounded Field Plate in Folded Lateral MOSFET Structure

A Carrier-Based Approach for Compact Modeling of the Long-Channel Undoped Symmetric Double-Gate MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach

An Exact Analytic Model of Undoped Body MOSFETs using the SPP Approach

A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

Compact Modeling for Inversion Charge in Nanoscale DG-MOSFETs

Analytical Charge Model for MOSFETs with 2-D Quantum Mechanical Effects

A 2d Semi-Analytical Model for the Potential Distribution of Ultra-Short Channel Mosfet

A Complete Carrier-Based Non-Charge-Sheet Analytic Model for Nano-Scale Undoped Symmetric Double-Gate MOSFETs

A Complete Carrier-Based Non-Charge-Sheet Analytic Theory for Nano-Scale Undoped Surrounding-Gate MOSFETs

Accurate 2-D analytical model for cylindrical gate-junctionless ferroelectric-nanowire (CG-JFe-NW) MOSFET with scaled channel length.

A Closed-Form Model for Position-Dependent Potential Across the Channel in DG-MOSFETs

Compact Modeling of Quantum Confinements in Nanoscale Gate-All-around MOSFETs

An explicit surface potential model of bulk-MOSFETs with inclusion of poly-gate accumulation, depletion, and inversion effects

Modeling electrochemical systems with weakly imposed Dirichlet boundary conditions