Abstract:The continued scaling-down of nanoscale semiconductor devices has made it very challenging to obtain analytic surface potential solutions from complex equations in physics, which is the fundamental purpose of the MOSFET compact model. In this work, we proposed a general framework to automatically derive analytical solutions for surface potential in MOSFET, by leveraging the universal approximation power of deep neural networks. Our framework incorporated a physical-relation-neural-network (PRNN) to learn side-by-side from a general-purpose numerical simulator in handling complex equations of mathematical physics, and then instilled the "knowledge'' from the simulation data into the neural network, so as to generate an accurate closed-form mapping between device parameters and surface potential. Inherently, the surface potential was able to reflect the numerical solution of a two-dimensional (2D) Poisson equation, surpassing the limits of traditional 1D Poisson equation solutions, thus better illustrating the physical characteristics of scaling devices. We obtained promising results in inferring the analytic surface potential of MOSFET, and in applying the derived potential function to the building of 130 nm MOSFET compact models and circuit simulation. Such an efficient framework with accurate prediction of device performances demonstrates its potential in device optimization and circuit design.

A Physics-Based Analytic Solution to the MOSFET Surface Potential from Accumulation to Strong-Inversion Region

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects

An explicit surface potential model of bulk-MOSFETs with inclusion of poly-gate accumulation, depletion, and inversion effects

A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

Continuous Surface Potential Versus Voltage Equation of Intrinsic Surrounding-Gate Mosfets and Analytic Solution from Accumulation to Strong Inversion Region

A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

Analytic yet continuous surface potential versus voltage equation of intrinsic nanoscale surrounding-gate MOSFETs and solution from accumulation to strong inversion region

Continuous Surface Potential versus Voltage Equation of Undoped Surrounding-Gate MOSFETs and Its Solution

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.

A Continuous Analytic Channel Potential Solution to Doped Symmetric Double-Gate MOSFETs from the Accumulation to the Strong-Inversion Region

A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs

A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs

An Advanced Surface-Potential-Plus Mosfet Model

Physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs

Analytic channel potential solution to the undoped surrounding-gate MOSFETs

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

Computation Efficient Yet Accurate Surface Potential Based Analytic Model for Symmetric Dg Mosfets to Predict Current-Voltage Characteristics

MOSFET Physics-Based Compact Model Mass-Produced: An Artificial Neural Network Approach

A Charge-Based Capacitance Model for Double-Gate Tunnel FETs With Closed-Form Solution