Abstract:Transistor models have been playing a key role in designing efficient power converters. As the operating frequency of the converters becomes higher, transistor models need to represent physical device behavior accurately. This paper proposes a comprehensive surface-potential-based model of silicon carbide (SiC) power MOSFETs that realizes accurate circuit simulations. Whereas conventional simulation models are based on empirical formulas, the proposed model is constructed in a surface-potential-based framework by considering the physical structure and behavior of vertical power SiC MOSFETs. The proposed model represents both IV and CV characteristics from weak inversion to the high-power region. In addition, the proposed model calculates the channel mobility degradation due to SiC/SiO$_2$ interface traps, which significantly affects the circuit performance. Through experiments using a commercial SiC power MOSFET, excellent agreements are obtained between measurement and simulation in IV and CV characteristics at various temperatures for wide power ranges up to 1kW. The transient behavior of a double-pulse tester is also well reproduced within a timing error of 12.6ns even under the high temperature.

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