Abstract:An analytic MOSFET surface potential model with inclusion of the poly-gate accumulation, depletion, and inversion effects is derived from the basic MOS device physics and its solution result is also discussed in this paper. By the means of the appropriate approximations and device physics derivation, the complex group of the surface-potential and poly-silicon potential equations is transformed into one single explicit surface potential equation of a MOSFET with poly-silicon accumulation, depletion, inversion effects, and this explicit equation is solved analytically. It is demonstrated that the proposed surface potential equation and its solution correctly yet accurately describe the physical behaviors of the poly-silicon potential, surface potential, gate charge, the gate capacitance, with continuous and smooth transitions from the accumulation region, thorough the depletion region, finally to the strong inversion region. The predicted MOSFET trans-capacitance behavior is verified by the result of fully numerical iteration method, thus, the surface potential equation presented can be used in advanced surface potential based MOSFET compact model development.

A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

Surface potential versus voltage equation from accumulation to strong inversion region for undoped symmetric double-gate MOSFETs

Continuous Surface Potential Versus Voltage Equation of Intrinsic Surrounding-Gate Mosfets and Analytic Solution from Accumulation to Strong Inversion Region

Continuous Surface Potential versus Voltage Equation of Undoped Surrounding-Gate MOSFETs and Its Solution

A Continuous Analytic Channel Potential Solution to Doped Symmetric Double-Gate MOSFETs from the Accumulation to the Strong-Inversion Region

Analytic yet continuous surface potential versus voltage equation of intrinsic nanoscale surrounding-gate MOSFETs and solution from accumulation to strong inversion region

A global continuous channel potential solution for double-gate MOSFETs

Analytic MOSFET surface potential model with inclusion of poly-gate accumulation, depletion, and inversion effects

A Physics-Based Analytic Solution to the MOSFET Surface Potential from Accumulation to Strong-Inversion Region

An explicit surface potential model of bulk-MOSFETs with inclusion of poly-gate accumulation, depletion, and inversion effects

A Complete Surface Potential-Based Core Model for Undoped Symmetric Double-Gate MOSFETs

A Rigorous and Concise Surface Potential-Based Core Model for the Undoped Symmetric Double-Gate Metal-Oxide-Semiconductor Field Effect Transistors

A complete surface potential-based core model for the undoped symmetric double-gate MOSFETs

A physics-based analytical surface potential and capacitance model of MOSFET's operation from accumulation to depletion region

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

Analytic channel potential solution to the undoped surrounding-gate MOSFETs

A Carrier-Based Analytic Model for the Undoped Symmetric Double-Gate MOSFETs

A continuous analytic <i>I</i>–<i>V</i> model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approach

Improved Analytical Model of Surface Potential with Modified Boundary Conditions for Double Gate Tunnel FETs.