Scattering mechanisms in shallow undoped Si/SiGe quantum wells

D. Laroche,S.-H. Huang,E. Nielsen,Y. Chuang,J.-Y. Li,C. W. Liu,T. M. Lu

DOI: https://doi.org/10.1063/1.4933026

IF: 1.697

2015-10-01

AIP Advances

Abstract:We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ∼ 100 nm to ∼ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ nα, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ∼ 2.3. At the highest achievable densities in the quantum wells buried at intermediate depth, an exponent α ∼ 5 is observed. We propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology