Abstract:The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise control over nanowire composition and phase. However, vapor-based nanowire growth employs batch processes with specialized pressure management systems designed to operate at high temperatures, limiting throughput. More recently developed solution-based nanowire growth processes have improved scalability but can require even more extensive pressure and temperature management systems. Here, we demonstrate a continuous-flow, solution-based nanowire growth process that utilizes the large Young-Laplace interfacial surface pressures and collective heating effects of colloidal metal nanocrystals under irradiation to drive semiconductor nanowire growth photothermally without the need for high-pressure or high-temperature equipment. In this process, a laser irradiates a solution containing metal nanocrystals and semiconductor precursors. Upon light absorption, the metal nanocrystals heat rapidly, inducing semiconductor precursor decomposition and nanowire growth. This process is performed on a benchtop in simple glassware under standard conditions. To demonstrate the generality of this technique, we synthesized three distinct semiconductor nanowire material systems: bismuth-seeded germanium nanowires, bismuth-seeded cadmium selenide nanowires, and indium-seeded germanium nanowires. The simplicity and versatility of this process opens the door to a range of experiments and technologies including in-line combinatorial identification of optimized reaction parameters, in situ spectroscopic measurements to study solution-based nanowire growth, and the potential production of nanowires with complex compositions or rationally incorporated dopants.

A Review of Self-Seeded Germanium Nanowires: Synthesis, Growth Mechanisms and Potential Applications

Synthesis and Electrical and Mechanical Properties of Silicon and Germanium Nanowires

Growth and Properties of Single-Crystalline Ge Nanowires and Germanide/Ge Nano-Heterostructures

Research progress of out-of-plane GeSn nanowires

Monolithic growth of ultra-thin Ge nanowires on Si(001)

Germanium Nanowires: Synthesis, Morphology and Local Structure Studies

Single-Crystalline Ge Nanowires and Cu3ge/Ge Nano-Heterostructures

One-dimensional Germanium Nanowires for Future Electronics

Formation and Device Application of Ge Nanowire Heterostructures Via Rapid Thermal Annealing

Laser-Assisted on Demand Growth of Semiconducting Nanowires

Review of the Preparation and Structures of Si Nanowires, Ge Quantum Dots and Their Composites

Oriented Growth of Ge Nanowires with Diameters below the Bohr Radius

Self-controlled growth of highly uniform Ge/Si hut wires for scalable qubit devices

Synthesis of germanium nanowires on insulator catalyzed by indium or antimony

Laser-Driven Growth of Semiconductor Nanowires from Colloidal Nanocrystals via the Young-Laplace Effect

Growth And Electrical Transport Of Germanium Nanowires

Investigation of Growth kinetics of the Electrochemical Germanium Nanowire Array Deposition in Galvanostatic Regime Using Indium Nanoparticles

Ge Nanowire Synthesis for Chip-Specific Application

Silicon Nanowires: A Review on Aspects of their Growth and their Electrical Properties

Single-crystal germanium layers grown on silicon by nanowire seeding

Engineering III–V Semiconductor Nanowires for Device Applications