Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

FORMATION AND FIELD EMISSION CHARACTERISTICS OF AMORPHOUS AND CRYSTALLINE <font>Si</font> NANOARRAYS

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Array-orderly single crystalline silicon nano-wires

Morphology Control and Electron Field Emission Properties of High-Ordered Si Nanoarrays Fabricated by Modified Nanosphere Lithography

Field Emission from a Periodic Amorphous Silicon Pillar Array Fabricated by Modified Nanosphere Lithography.

OS1503 Development of Highly Ordered Silicon Nanowire Array

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Controlling Growth And Field Emission Properties Of Silicon Nanotube Arrays By Multistep Template Replication And Chemical Vapor Deposition

Formation of a Single-Layer Si Nanostructure and Its Luminescence Characteristics

Enhanced Electron Field Emission from Dense Si Nano-Dots Prepared by Laser Crystallization of Ultrathin Amorphous Si Films

Formation and properties of high density Si nanodots

Crystallinity-Controlled Germanium Nanowire Arrays: Potential Field Emitters

Formation of a Dense Nanocrystalline Si Array on an Insulating Layer by Laser Irradiation of Ultrathin Amorphous Si Films

The Formation of High-Density Uniform Silicon Nanocrystals on Insulator Substrate and Their Surface Morphology

Field electron emission from ultra-high density Si nanotip arrays

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Fabrication and field emission property of a Si nanotip array

Raman spectroscopy and field electron emission properties of aligned silicon nanowire arrays

An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

Insight into the Field-Induced Surface Deformation of Si Nanoapex and the Achieving of Highly Reliable Gated Si Nanoemitters