Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Field Emission from a Periodic Amorphous Silicon Pillar Array Fabricated by Modified Nanosphere Lithography.

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Fabrication of Submicrometer Inp Pillars by Colloidal Lithography and Dry Etching

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

FORMATION AND FIELD EMISSION CHARACTERISTICS OF AMORPHOUS AND CRYSTALLINE <font>Si</font> NANOARRAYS

Enhanced Blue-Orange-Red Light Emission From Nc-Si:H/Sio2 Pillar Arrays Using Nanosphere Lithography

Morphology Control and Electron Field Emission Properties of High-Ordered Si Nanoarrays Fabricated by Modified Nanosphere Lithography

Facile Synthesis of Silicon Micropillar Arrays Using Extreme Ultraviolet Lithography and Ag-Assisted Chemical Etching Method

Enhanced Electron Field Emission from Dense Si Nano-Dots Prepared by Laser Crystallization of Ultrathin Amorphous Si Films

Field Emission from Dense, Sparse, and Patterned Arrays of Carbon Nanofibers

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Fabrication of Silicon Hierarchical Nanopillar Arrays Based on Nanosphere Lithography

Fabrication of large-scale periodic silicon nanopillar arrays for 2D nanomold using modified nanosphere lithography☆

Enhanced electroluminescence from nc-Si/SiO2 pillar arrays using nanosphere lithography

Enhanced light absorption of amorphous silicon thin film by substrate control and ion irradiation

Electron Field Emission from Graphene Nanosheets Grown on Si Nanoporous Pillar Array

Controlling Growth And Field Emission Properties Of Silicon Nanotube Arrays By Multistep Template Replication And Chemical Vapor Deposition

Fabrication and field emission property of a Si nanotip array

Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Size and Morphology Control of Highly-Ordered Nano-Silicon Pillar Fabricated by Direct Nanosphere Lithography