Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

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Fabrication of Vertically Aligned Si Nanowires and Their Application in A Gated Field Emission Device

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Field Emission from As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon/Silicon Heterojunctions Grown Using A Pulsed Filtered Cathodic Vacuum Arc Technique

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Field Emission from a Periodic Amorphous Silicon Pillar Array Fabricated by Modified Nanosphere Lithography.

Enhanced Field Emission from ZnO Nanopencils by Using Pyramidal Si(100) Substrates

Highly Efficient Field Emission from Large-Scale and Uniform Monolayer Graphene Sheet Supported on Patterned ZnO Nanorod Arrays

Preparation, superior field emission properties and first principles calculation of electronic structure of SiC nanowire arrays on Si substrate

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

The dopant (n- and p-type), band gap, and size-dependent field electron emission induced from silicon nanowires

Field emission properties of ultra-high density vertical aligned silicon nanowires

Enhanced Electron Field Emission from Dense Si Nano-Dots Prepared by Laser Crystallization of Ultrathin Amorphous Si Films

Patterned Uniformly Orientated Silicon Nanocrystallite Films and Efficient Field Emission Characteristics

Nanosized Graphene Sheets Enhanced Photoelectric Behavior of Carbon Film on P-Silicon Substrate

Observation of field emission from GeSn nanoparticles epitaxially grown on silicon nanopillar arrays

Novel Planar Field Emission of Ultra-Thin Individual Carbon Nanotubes.