Abstract:Multifunctional electronic devices that combine logic operation and data storage functions are of great importance in developing next-generation computation. The recent development of van der Waals (vdW) heterostructures based on various two-dimensional (2D) materials have brought exceptional opportunities in designing novel electronic devices. Although various 2D-heterostructure-based electronic devices have been reported, multifunctional devices that can combine logic operations and data storage functions are still quite rare. In this work, we design and fabricate a half-floating-gate field-effect transistor based on MoS2–BN–graphene vdW heterostuctures, which can be used for logic operations as a MOSFET, nonvolatile memory as a floating-gate MOSFET (FG-MOSFET), and rectification as a diode. These results could lay the foundation for various applications based on 2D vdW heterostuctures and inspire the design of next-generation computation beyond the von Neumann architecture.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c04737.More details of the experimental methods, Raman spectra of the MoS2–h-BN–graphene heterostructure, AFM images of the MoS2–h-BN–graphene heterostructure, semilogarithmic plots of Ids through the MoS2 n+–n diodes, and Ids–Vds curves recorded for different values of Vgs of the MoS2 MOSFET (PDF)This article has not yet been cited by other publications.

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