Abstract:Gallium nitride (GaN)-based high electron mobility transistor (HEMT) power devices have demonstrated great potential applications due to high current density, high switching speed, and low ON-resistance in comparison to the established silicon (Si)-based semiconductor devices. These superior characteristics make GaN HEMT a promising candidate for next-generation power converters. Many of the early GaN HEMTs are devices with Schottky gate, which suffer a high gate leakage and a small gate swing. By inserting an insulator under gate metal, the MIS-HEMT is highly preferred over the Schottky-gate HEMT for high-voltage power switche, owing to the suppressed gate leakage and enlarged gate swing. However, the insertion of the gate dielectric creates an additional dielectric/(Al) GaN interface that presents some great challenges to AlGaN/GaN MIS-HEMT, such as the threshold voltage (Vth) hysteresis, current collapse and the reliability of the devices. It has been reported that the poor-quality native oxide (GaOx) is detrimental to the dielectric/(Al) GaN interface quality that accounted for the Vth instability issue in the GaN based device. Meanwhile, it has been proved that in-situ plasma pretreatment is capable of removing the surface native oxide. On the other hand, low power chemical vapor deposition (LPCVD)-Si3N4 with free of plasma-induced damage, high film quality, and high thermal stability, shows great potential applications and advantages as a choice for the GaN MIS-HEMTs gate dielectric and the passivation layer. In this work, an in-situ pre-deposition plasma nitridation process is adopted to remove the native oxide and reduce surface dangling bonds prior to LPCVD-Si3N4 deposition. The LPCVD-Si3N4/GaN/AlGaN/GaN MIS-HEMT with a high-quality LPCVD-Si3N4/GaN interface is demonstrated. The fabricated MIS-HEMT exhibits a very-low Vth hysteresis of 186 mV at VG-sweep=(-30 V, +24 V), a high breakdown voltage of 881 V, with the substrate grounded. The hysteresis of our device at a higher positive end of gate sweep voltage (VG +20 V) is the best to our knowledge. Switched off after an off-state VDS stress of 400 V, the device has a dynamic on-resistance Ron only 36% larger than the static Ron.

Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs with AlN/SiN Bilayer Dielectric

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

Characterization and Reliability Analysis of Enhancement-Mode PEALD AlN/LPCVD SiN<sub>x</sub> GaN MISFET with In Situ H<sub>2</sub>/N<sub>2</sub> Plasma Pretreatment

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

Integration of Lpcvd-Sinx Gate Dielectric with Recessed-Gate E-Mode Gan Mis-Fets: Toward High Performance, High Stability and Long Tddb Lifetime

Monolithic Integration of Enhancement/depletion-Mode High Electron Mobility Transistors Using Hydrogen Plasma Treatment

Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Fabrication of High-Uniformity and High-Reliability Si 3 N 4 /algan/gan MIS-HEMTs with Self-Terminating Dielectric Etching Process in a 150-Mm Si Foundry

823-Ma/mm Drain Current Density and 945-Mw/cm2 Baliga’s Figure-of-Merit Enhancement-Mode GaN MISFETs with a Novel PEALD-AlN/LPCVD-Si3N4 Dual-Gate Dielectric

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Non-Buffer Epi-AlGaN/GaN on SiC for High-Performance Depletion-Mode MIS-HEMTs Fabrication

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

AlGaN/GaN MIS-HEMTs of Very-Low ${v}_{\sf {{th}}}$ Hysteresis and Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator