Abstract:With the continuous improvement of the power density and operating frequency in power conversion systems, it is necessary to develop the new power electronic products with better performances than the conventional semiconductors. As a typical representative of the wide-bandgap semiconductors, gallium nitride (GaN)-based heterostructure has unique high-density two-dimensional electron gas (2DEG) and hence can be used to fabricate the fast high electron mobility transistors (HEMTs) with low power loss. Therefore, they are considered as a promising candidate for the next-generation power devices to improve the switching efficiency and speed. Compared with the depletion mode (D-mode, also known as normally-on) devices, the enhancement-mode (E-mode, also known as normally-off) devices have the advantages of safety, energy-saving, and better circuit topology design, making them more attractive for industry applications. In this paper, the different structure schemes and fabrication technologies of the GaN-based E-mode HEMTs are reviewed and summarized. Their technical characteristics are systematically compared. The influences of material epitaxial structure, ohmic contact, material etching, field plate design, and passivation process on the device performances are discussed in detail wherein the fabrication process of the recessed-gate MIS-HEMTs are emphatically illustrated, focusing on the interface treatment technology and dielectric engineering. In addition, the complicated reliability issues and physical mechanisms in the E-mode HEMTs induced by high temperature, high voltage, and high frequency switching are introduced and discussed. Finally, the potential technical solutions are proposed and the future application fields of GaN-based E-mode HEMTs are prospected.

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

Monolithic Integration of GaN-Based Enhancement/Depletion-Mode MIS-HEMTs with AlN/SiN Bilayer Dielectric

High Temperature Characteristics of GaN-Based Inverter Integrated With Enhancement-Mode (E-Mode) MOSFET and Depletion-Mode (D-Mode) HEMT

Threshold voltage modulation on a CTL-based monolithically integrated E/D-mode GaN inverters platform with improved voltage transfer performance

Monolithically Integrated Logic Circuits Based on P-Nio Gated E-mode GaN HEMTs

GaN Monolithic Digital Units on P-GaN Platform

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring

Monolithic Heterogeneous Integration of Si(100)/GaN CMOS Inverters and Normally-Off GaN Power Devices for High Switching Frequency and High Power Applications

Enhancement-Mode GaN P-Channel MOSFETs for Power Integration

Low static power consumption GaN-based CMOS-like inverter design

The Impact of Etch Depth of D-mode AlGaN/GaN MIS-HEMTs on DC and AC Characteristics of 10 V Input Direct-Coupled FET Logic (DCFL) Inverters.

Progress of GaN-Based E-mode HEMTs

Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Monolithic Integration of Enhancement- and Depletion-Mode AlGaN/GaN HEMTs for GaN Digital Integrated Circuits

Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

Monolithically Integrated Enhancement/Depletion-Mode AlGaN/GaN HEMT Inverters and Ring Oscillators Using $hboxcf_4$ Plasma Treatment

Device Design for Gate-All-Around-Nanowire Tunneling CMOS-FETs of Axial Ge–Si Heterojunction Through Inverter Performance Evaluation

Charge trapping layer enabled high-performance E-mode GaN HEMTs and monolithic integration GaN inverters

Hybrid Complementary Metal-Oxide-Semiconductor Inverters Based on Single Nanowires