Abstract:In recent years, wide-bandgap devices (WBG) such as silicon carbide (SiC) and gallium nitride (GaN) transistors have drawn significant research attention in power conversion applications where higher efficiency, higher power density and lower cost are required, for example, in electric vehicle (EV) applications. Owing to its better figures of merit on on-resistance, switching speed and junction temperature, enhancement-mode GaN high electron mobility transistors (HEMTs) are able to be operated with switching frequency up to the megahertz range, through which the size of passive components in the power converters can be significantly reduced. Consequently, the power converter’s integration level and power density can be increased. In GaN-based power converters, the switching energy loss increases naturally along with the switching frequency, which is the dominant loss component. Consequently, it is always one of the top priority performances to be considered in research and development activities. For device manufacturers, with access to internal materials and dimensional parameters, physics-based device models are usually used. Although these models can reveal detailed characteristics of the devices, they are not accessible to the public and can be very time-consuming to develop. Analytical models, that can emulate the transistor’s dynamic behaviour and predict the switching energy loss without consuming too much computing resources, are always an essential tool to help provide guidelines to engineers for circuit design and performance optimization purposes. This thesis develops a computationally inexpensive and straightforward switching transient model which proves to be more accurate than conventional model through simulation and experiments. Currently, in the commercial market, there are only a few mature designs of GaN three-phase inverter products, and most of them are costly. This unavoidable phenomenon is led by the fact that the gate driver and power loop design for GaN is demanding. Some companies such as EPC, Navitas and Power Integrations are committed to monolithic-integrated gate drivers, but they are complex and expensive. Thus, this thesis also aims to design a GaN-based three-phase inverter with low cost and low complexity in the gate drive circuit. In addition, to achieve high performance GaN-based inverter, parasitic components in the power loop have to be minimized. In this thesis study, parasitic parameters of the power loop are extracted through Ansys Q3D simulation and then validated through experimental test results. With accurate parasitic parameters, the layout of the PCBs is improved to achieve better inverter performance.

Low static power consumption GaN-based CMOS-like inverter design

Design of Low-Inductance Switching Power Cell for GaN HEMT Based Inverter

Ultra-Low Inductance Design for A Gan Hemt Based 3L-Anpc Inverter

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology

A Gallium Nitride Integrated Power Module with Ultra-low Parasitic Inductances and Thermal Resistance

GaN-based low-power JLDG-MOSFETs: Effects of doping and gate work function

Monolithic Integration of D/E-Mode Tri-Gate AlGaN/GaN MIS-HEMTs for Power ICs

Low‐Power Complementary Inverter with Negative Capacitance 2D Semiconductor Transistors

High-performance AlGaN/GaN MIS-HEMT Device Based on in Situ Plasma Nitriding and Low Power Chemical Vapor Deposition Si3N4 Gate Dielectrics

Vertical GaN Power Transistor with Embedded Fin-shaped Diode for High Performance Power Conversion

A Novel E-Mode GaN P-Misfet with Hole Compensation Effect Achieving High Drain Current and Ultra-Low Subthreshold Slope

Ultralow-power Complementary Metal-Oxide-semiconductor Inverters Constructed on Schottky Barrier Modified Nanowire Metal-Oxide-semiconductor Field-Effect-transistors.

Monolithic β-Ga2O3 NMOS IC based on heteroepitaxial E-mode MOSFETs

Integration of low-thermal-budget In2O3 NMOS inverter and GaN HEMT for power electronics

Design and Improved Switching Transient Modeling for A GaN-based Three Phase Inverter

A Monolithic GaN Power Stage with Common-Mode Transient Immunity and Negative Voltage Operation Design for High Frequency Power Converters

A Novel Enhancement-Mode Gallium Nitride p-Channel Metal Insulator Semiconductor Field-Effect Transistor with a Buried Back Gate for Gallium Nitride Single-Chip Complementary Logic Circuits

A Compact Double-Sided Cooling 650V/30A GaN Power Module With Low Parasitic Parameters

Enhancement Mode (E-Mode) AlGaN/GaN MOSFET With A/mm Leakage Current and ON/OFF Current Ratio

Realization of Extremely High-Gain and Low-Power in nMOS Inverter Based on Monolayer WS2 Transistor Operating in Subthreshold Regime

Design, optimization, and analysis of Si and GaN nanowire FETs for 3 nm technology