Abstract:It remains an elusive goal to obtain high performance single-walled carbon-nanotube (SWNT) electronics such as field effect transistors (FETs) composed of single- or few-chirality SWNTs, due to broad distributions in as-grown materials. Much progress has been made by various separation approaches to obtain materials enriched in metal or semiconducting nanotubes or even in single chiralties. However, research in validating SWNT separations by electrical transport measurements and building functional electronic devices has been scarce. Here, we performed length, diameter, and chirality separation of DNA functionalized HiPco SWNTs by chromatography methods, and we characterized the chiralities by photoluminescence excitation spectroscopy, optical absorption spectroscopy, and electrical transport measurements. The use of these combined methods provided deeper insight to the degree of separation than either technique alone. Separation of SWNTs by chirality and diameter occurred at varying degrees that decreased with increasing tube diameter. This calls for new separation methods capable of metallicity or chirality separation of large diameter SWNTs (in the similar to 1.5 nm range) needed for high performance nanoelectronics. With most of the separated fractions enriched in semiconducting SWNTs, nanotubes placed in parallel in short-channel (similar to 200 nm) electrical devices fail to produce FETs with high on/off switching, indicating incomplete elimination of metallic species. In rare cases with a certain separated SWNT fraction, we were able to fabricate FET devices composed of small-diameter, chemically separated SWNTs in parallel, with high on-/off-current (I-on/I-off) ratios up to 10(5) owing to semiconducting SWNTs with only a few (n,m) chiralities in the fraction. This was the first time that chemically separated SWNTs were used for short channel, all-semiconducting SWNT electronics dominant by just a few (n,m)'s. Nevertheless, the results suggest that much improved chemical separation methods are needed to produce nanotube electronics at a large scale.

Electronically Pure Single-Chirality Semiconducting Single-Walled Carbon Nanotube for Large-Scale Electronic Devices

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

Nanotube and Nanowire Transistors

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Optical Characterizations and Electronic Devices of Nearly Pure (10,5) Single-Walled Carbon Nanotubes

Assessment of chemically separated carbon nanotubes for nanoelectronics.

High‐Purity Monochiral Carbon Nanotubes with a 1.2 Nm Diameter for High‐Performance Field‐Effect Transistors

Direct Synthesis of Semiconducting Single‐Walled Carbon Nanotubes Toward High‐Performance Electronics

Semiconductor-enriched single wall carbon nanotube networks applied to field effect transistors

Single-Walled Carbon Nanotube Thin Film with High Semiconducting Purity by Aerosol Etching toward Thin-Film Transistors

Controlled Preparation of Single-Walled Carbon Nanotubes as Materials for Electronics

Aligned, high-density semiconducting carbon nanotube arrays for high-performance electronics

Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

Low-Temperature, Directly Depositing Individual Single-Walled Carbon Nanotubes for Fabrication of Suspended Nanotube Devices

Advances in separation of monochiral semiconducting carbon nanotubes and the application in electronics

Selective Growth of Metal‐Free Metallic and Semiconducting Single‐Wall Carbon Nanotubes

High-performance Doping-Free Carbon-Nanotube-based CMOS Devices and Integrated Circuits

Almost Perfectly Symmetric Swcnt-Based Cmos Devices and Scaling

Selective Chemistry-Based Separation of Semiconducting Single-Walled Carbon Nanotubes and Alignment of the Nanotube Array Network under Electric Field for Field-Effect Transistor Applications

SORTING SEMICONDUCTING SINGLE-WALLED CARBON NANOTUBES AND USING THEM AS RANDOM NETWORK OF FIELD-EFFECT TRANSISTORS

Aligned, Ultralong Single-Walled Carbon Nanotubes: from Synthesis, Sorting, to Electronic Devices