Abstract:Irradiation-induced atomic-scale defects and lattice disorder in Silicon Carbide (SiC) can significantly affect the material's mechanical properties. Currently there lacks a unified physical model capable of describing the law in which the properties of SiC scale with the accumulation of defects, especially in terms of the underlying physical mechanism. To develop fundamental models that are capable of describing the various physical properties of SiC as a function of microstructural change, molecular dynamics simulations of uniaxial tension were performed on a series of irradiation-amorphized SiC (a-SiC) samples with a range of imposed chemical disorder, which is defined as the ratio between the number of homonuclear bonds and heteronuclear bonds (chi NC-C / NSi-C). With increasing chemical disorder, significant alternation of mechanical response of a-SiC has been detected in terms of increasingly pronounced plastic flow. Meanwhile relevant mechanical properties, including Young's modulus, strength, yield stress and strain, as well as failure strain scale monotonically with chemical disorder while in distinct manners. Specifically slight chemical disorder (chi = 0.045) could induce substantial reduction of Young's modulus up to -2%, whereas strength basically linearly varies with chemical disorder until chi approximate to 0.5 upon which the variations in mechanical properties tend to saturate. Further examination of the evolution of atomic structure of a-SiC reveals a crossover of deformation mechanisms from homogeneous elastic deformation to localized plastic flow, which accounts for the strong chemical disorder dependence of the mechanical properties as well as mechanical responses of amorphous SiC. This crossover is also manifested in switching of fracture mode from brittle failure dominated by lattice instability in the ligaments between topological disordered clusters to nanoductile failure preceded by percolation of nanocavities. Employing chemical disorder to measure the defect concentration of a-SiC could contribute to the quantification of the correlation between mechanical properties and the corresponding defective a-SiC structure. Moreover the distinct scale laws shown by Young's modulus and strength with chemical disorder and the proposed critical chemical disorder threshold could benefit the quantitative evaluations of the mechanical performances of SiC components in different irradiation environments.

A Comparison Study of Mechanical Change and Chemical Disorder in 4H-Sic Irradiated with Si5+ and He2+ at Room Temperature

Study on microstructure and mechanical properties of He and H ion irradiated 6H-SiC

Optical and structural properties of 6H–SiC irradiated by Si3+⧹He+ coimplantation

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Damage Production in Silicon Carbide by Dual Ion Beams Irradiation

Optical and Structural Properties of 6h–sic Irradiated by Coimplantation

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Microstructure Investigation of He+- Implanted and Post-Implantation-Annealed 4H-Sic

Investigation of the damage behavior in SiC without any additives irradiated with Si ions by GIXRD, Raman and TEM

Atomic-scale revealing defects in ion irradiated 4H-SiC

Evolution of microstructure and mechanical properties of SiCf/SiC composites induced by He ions irradiation at various temperatures

Irradiation damage in silicon carbide based on a multi-mode scanning probe microscope

Atomistic Simulations of the Mechanical Deformation of Irradiation-Amorphized Silicon Carbide

Mechanical and optical property assessment of irradiated SiC with displaced atoms

Damage Effects in 6H-Sic Single Crystals by Si&H Dual Ion Irradiation: A Combined Raman and XRD Study

Investigation of Microstructure and Nanoindentation Hardness of C+ & He+ Irradiated Nanocrystal SiC Coatings during Annealing and Corrosion

Anisotropic Deformation of 4H-Sic Wafers: Insights from Nanoindentation Tests

Damage Effects of Au&He Dual Ion Irradiated Silicon Carbide

Microstructure characteristics of C+ and He+ irradiated SiCf/SiC composites before and after annealing

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Depth Profiling by Raman Spectroscopy of High-Energy Ion Irradiated Silicon Carbide