Abstract:The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with gamma-rays from Co-60) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by gamma-rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in gamma-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in gamma-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevant to the type of irradiation.

Hydrogen-Defect Shallow Donors in Si

Interaction of hydrogen with neutron-induced vacancy defects in Si

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogen

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Deep Levels in Gamma-Ray Irradiated N-Type and P-Type Hydrogen-Grown Float-Zoned Silicon

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Three Kinds of Hydrogen-Related Electron Irradiated Defects in Silicon Grown in Hydrogen

Defect Annealing of Neutron-Irradiated Silicon Crystals

Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

Influence of Grown-in Hydrogen on Thermal Donor Formation and Oxygen Precipitation in Czochralski Silicon Crystals

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

A Positron Annihilation Study of Defects in Neutron Transmutation-Doped Float-Zone (Ar)-Si

Effect of Thermal Pretreatment on Electron-Irradiation Induced Defects in Hydrogen-Grown Silicon

Characters of NTD FZ(H 2 ) Si Kept at Room Temperature for Three Years

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen

Behavior of hydrogen during laser crystallization and RTA of a-Si: H SOI

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Multi-Scale Simulations Of Hydrogen Diffusion And Induced Defects In Amorphous-Sio2/Si Interface

Study of nitrogen-related defects by means of gold and hydrogen diffusion investigations