Abstract:The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with gamma-rays from Co-60) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by gamma-rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in gamma-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in gamma-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevant to the type of irradiation.

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Hydrogen-Defect Shallow Donors in Si

Deep Levels in Gamma-Ray Irradiated N-Type and P-Type Hydrogen-Grown Float-Zoned Silicon

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Three Kinds of Hydrogen-Related Electron Irradiated Defects in Silicon Grown in Hydrogen

Interaction of hydrogen with neutron-induced vacancy defects in Si

Vacancy-type Defects in Large-Dose Neutron-Irradiated Silicon Containing Hydrogen

Role of Nitrogen Related Complexes in the Formation of Defects in Silicon

Defects in nitrogen-doped multicrystalline silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

Oxygen Precipitation in Nitrogen Doped Czochralski Silicon Wafers. I. Formation Mechanisms of Near-Surface and Bulk Defects

A New Triclinic Defect in Neutron-Irradiated Fz-Silicon Grown in Hydrogen

J un 2 01 9 Ultraslow Dynamic Annealing of Neutron-induced Defects in n-type Silicon

DEEP LEVELS IN ELECTRON-IRRADIATED SILICON CONTAINING LITHIUM

Extended Defects in Nitrogen-Doped Czochralski Silicon During Diode Process

Process-induced defects in nitrogen doped Czochralski silicon in diode processes

Bonded Hydrogen in Nanocrystalline Silicon Photovoltaic Materials: Impact on Structure and Defect Density

Defect Annealing of Neutron-Irradiated Silicon Crystals

Nitrogen Effect on Hydrogen Penetration into Cz Si During Wet Chemical Etching

The convergent effect of the annealing temperatures of electron irradiated defects in FZ silicon grown in hydrogen