Abstract:Single crystal silicon is an important material used for semiconductor devices and also a potential material in device research. Far-infrared optical properties are studied for the helium ion implanted samples with different fluences of 5.0 x 10(16), 1.0 x 10(17), 2.0 x 10(17), and 4.0 x 10(17) cm(-2). The absorption coefficient and refractive index of silicon with different helium concentrations are measured in the wave number range from 4 to 85 cm(-1) and temperature range from 145 to 520 K. The results show that the absorption coefficient increases with increasing fluence of helium ions, but the refractive index decreases. The correlations between absorption coefficient and refractive index and temperature of all samples are similar. The refractive index increases with temperature in the whole measurement temperature range, but the absorption coefficient has different trends in the different wavebands. The absorption coefficient decreases with the increase of temperature in the region below 12 cm(-1); however, the absorption coefficient increases when the wave number is larger than 30 cm(-1). The absorption coefficient curves at different wavebands are well fitted by the Drude model. A large number of helium bubbles and defects, such as voids and dislocations have been observed in the implanted area by transmission electron microscopy (TEM), which contributes to the increase of optical absorption.

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Effects of Impurity on the IR Absorption Bands of Si-H Centers

Study on the infrared absorption of nitrogen-oxygen complex in silicon

INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

Hydrogen-Defect Shallow Donors in Si

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Effect of Hydrogen Treatment Upon Silicon Surface Investigated with the Multiple Internal Reflection Infrared Spectroscopy

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Far-infrared properties of helium-doped silicon

Characters of NTD FZ(H 2 ) Si Kept at Room Temperature for Three Years

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Light Absorption Engineering of Hydrogenated Nanocrystalline Silicon by Femtosecond Laser

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

The Intrinsic Gettering in Neutron Irradiation Czochralski-Silicon