Abstract:Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Kinetics of Nitrogen Indiffusion in Czochralski Silicon Annealed in Nitrogen Ambient

Effects of Impurity on the IR Absorption Bands of Si-H Centers

Study on the infrared absorption of nitrogen-oxygen complex in silicon

INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

Hydrogen-Defect Shallow Donors in Si

Positron-Annihilation Investigation of Defects in Hydrogen-Containing Fz Si Irradiated with High-Dose Reactor Neutrons

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Characters of NTD FZ(H 2 ) Si Kept at Room Temperature for Three Years

Influence of neutron radiation dose on annealing behavior of defects in c-Si

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

The Intrinsic Gettering in Neutron Irradiation Czochralski-Silicon

Infrared Spectra of Silicon Nanowires

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Crystallinity and Sub-Band Gap Absorption of Femtosecond-Laser Hyperdoped Silicon Formed in Different N-Containing Gas Mixtures