Effects of Impurity on the IR Absorption Bands of Si-H Centers

Du Yongchang,Zhang Yufeng,Weng Shifu

DOI: https://doi.org/10.1117/12.970897

1985-01-01

Abstract:The IR bands in N-type and P-type floating-zone silicon grown in hydrogen atmosphere before and after neutron irradiation have been studied using FT-IR spectroscopy. The effects of impurity on the IR bands of Si-H centers have been observed.

What problem does this paper attempt to address?

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

ZHANG YU-FENG,DU YONG-CHANG,WENG SHI-FU,MENG XIANG-TI,ZHANG BING-ZHONG

DOI: https://doi.org/10.7498/aps.34.849

IF: 0.906

1985-01-01

Acta Physica Sinica

Abstract:Infrared absorption spectra of neutron irradiated FZ-Si grown in hydrogen atmosphere have been measured in wavenumber ranges 1800—300 em-1 and 400—200cm-1 by FTIR. The annealing behaviour of stronger absorption bands has been shown. By comparing with spectral results of proton implanted silicon measured by IR and neutron irradiated FZ-Si grown in hydrogen atmosphere measured by DLTS, the possible constructions of H-related centers are discussed.
Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

Xiang-Ti Meng,Ji-Wu Xiong,Yong-Chang Du

DOI: https://doi.org/10.1002/pssa.2211430236

1994-01-01

Abstract:A new and broad infrared (IR) band in an annealed neutron transmutation doped (NTD) floating zone (FZ) silicon is presented. Deep level transient spectroscopy (DLTS) was used to characterize the hydrogen-doped silicon and analyze the broad IR band.
Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

I. V. Antonova,D. Yang,V. P. Popov,V. I. Obodnikov,A. Misiuk

DOI: https://doi.org/10.1016/S0167-9317(02)00943-7

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:A comparison of the thermal donor formation processes and related phenomena in the hydrogen-implanted Czochralski-grown silicon wafers one of which was doped with nitrogen during the growth was made. An average thermal donor concentration in the crystals was found to be higher in the nitrogen-doped silicon, but the difference was not very large. Suppression of the impurity gettering on radiation damages, and more effective passivation of the free carriers by hydrogen in near-surface layer was found for nitrogen-doped silicon.
Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

S. Binetti,S. Pizzini,R. Somaschini,A. Le Donne,Dongsheng Li,Deren Yang

DOI: https://doi.org/10.1016/S0167-9317(02)00921-8

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:The effect of thermal annealing of nitrogen-doped Czochralski-grown silicon in the range 450-650 °C was investigated by photoluminescence (PL), infrared spectroscopy and resistivity measurements. By studying the PL emission in the 0.7-1.1 eV range it was shown that the free exciton luminescence is depressed by the presence of nitrogen, possibly related to the existence of non-radiative recombination centers. Optical emissions associated with nitrogen and carbon complexes were also investigated after having submitted the nitrogen-doped samples to suitable heat treatments in the range of formation of old and new thermal donors. Photoluminescence lines related to N-C complexes, which are usually observed in nitrogen-implanted silicon, were detected after thermal annealing at 650 °C.
Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

Huifan Xiong,Xuesong Lu,Xu Gao,Yuchao Yan,Shuai Liu,Lihui Song,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1674-4926/23090024

2024-01-01

Journal of Semiconductors

Abstract:Radiation damage produced in 4H-SiC by electrons of different doses is presented by using multiple characterization techniques. Raman spectra results indicate that SiC crystal structures are essentially impervious to 10 Me V electron irradiation with doses up to 3000 kGy. However, irradiation indeed leads to the generation of various defects, which are evaluated through photoluminescence（PL） and deep level transient spectroscopy（DLTS）. The PL spectra feature a prominent broad band centered at 500 nm, accompanied by several smaller peaks ranging from 660 to 808 nm. The intensity of each PL peak demonstrates a linear correlation with the irradiation dose, indicating a proportional increase in defect concentration during irradiation. The DLTS spectra reveal several thermally unstable and stable defects that exhibit similarities at low irradiation doses.Notably, after irradiating at the higher dose of 1000 kGy, a new stable defect labeled as R 2 （Ec-0.51 eV） appeared after annealing at 800 K. Furthermore, the impact of irradiation-induced defects on SiC junction barrier Schottky diodes is discussed. It is observed that high-dose electron irradiation converts SiC n-epilayers to semi-insulating layers. However, subjecting the samples to a temperature of only 800 K results in a significant reduction in resistance due to the annealing out of unstable defects.
The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

XT MENG,GG QIN,YC DU,YF ZHANG

DOI: https://doi.org/10.1063/1.340342

IF: 2.877

1988-01-01

Journal of Applied Physics

Abstract:A strong, wide infrared absorption band in 2050–2150-cm−1 range has been found in neutron-transmutation-doped silicon grown by the floating-zone method in a hydrogen atmosphere and annealed at 650 °C. This band is due to the stretching vibration of the Si–H bond, formed as hydrogen atoms diffuse, aggregate, and saturate silicon dangling bonds in the neutron-irradiation disordered region. This absorption band is similar to that of hydrogenated amorphous silicon in the 1900–2150-cm−1 range except that its vibration frequency is somewhat higher. The disordered region defect and its amorphous-siliconlike property could be observed because of the incorporation of hydrogen. The hydrogen concentration of the floating-zone melted silicon grown in a hydrogen atmosphere used in this study is estimated to be (1–2)×1017 cm−3 on the basis of the strength of this wide infrared absorption band. A possible reason for this vibration frequency shift is discussed.
Infrared Spectra of Silicon Nanowires

Junjie Niu,Deren Yang,Jian Sha,Jian Nong Wang,Ming Li

DOI: https://doi.org/10.1016/j.matlet.2006.06.017

IF: 3

2007-01-01

Materials Letters

Abstract:Infrared (IR) spectra of the silicon nanowires (SiNWs) with oxide layer are analyzed by introducing the disorder-induced mechanical coupling between the optically active oxygen asymmetric stretch (AS) and inactive oxygen asymmetric stretch (I-AS) modes in terms of the transverse-optic (TO) and longitudinal-optic (LO) vibrational modes. The shapes of the IR spectra are similar to that of the reported SiO2, indicating that the SiNWs possess an oxide layer outside. The TO frequencies of coupled AS and I-AS are experimentally observed as peak at approximately 1085 cm(-1) and its shoulder of 1200 cm(-1), respectively. The other TO absorption peaks of similar to 468 cm(-1), similar to 480 cm(-1), and similar to 808 cm(-1) are also observed. Furthermore, the intensity of the AS-mode TO band centered at similar to 1085 cm(-1) decreases while those of silicon lattice absorption peaks are enhanced with the crystalline quality increased. (c) 2006 Elsevier B.V. All rights reserved.
Effect of Hydrogen Treatment Upon Silicon Surface Investigated with the Multiple Internal Reflection Infrared Spectroscopy

L ZHONG,L LING,F SHIMURA

DOI: https://doi.org/10.1063/1.109710

IF: 4

1993-01-01

Applied Physics Letters

Abstract:Multiple internal reflection infrared (MIR-IR) spectroscopy is used to study native oxide on silicon wafers which were annealed at 1200 °C in a hydrogen ambient. MIR-IR spectra of native oxide are dominated by a peak at 1230 cm−1, which shifts 10 to 1220 cm−1 for the samples with hydrogen treatment. A mechanism behind the shift is discussed according to the central force model, which suggests a 0.8% reduction in the distance between silicon atoms in the oxide. It is proposed that the introduction of hydrogen gives rise to a lattice contraction in the silicon substrate, and in turn, in the native oxide, which causes the MIR-IR absorption shift.
Study on the infrared absorption of nitrogen-oxygen complex in silicon

Deren Yang,Duanlin Que,Sunimo Koji

1995-01-01

Abstract:The infrared absorption characteristics of N-doped and N-undoped single-silicon produced under different conditions were experimentally investigated by means of the Fourier transform infrared spectroscope (FTIR) at either room temperature (300K) or low temperature (8K). The results show that (1) the 1030cm-1, 1000cm-1, and 806cm-1 optical absorption lines are related to the nitrogen-oxygen complex in the nitrogen-doped CZ silicon; (2) the 839cm-1 absorption-line is related to the silicon nitride formed on the silicon surface during annealing in the nitrogen atmosphere; (3) whereas the 1021cm-1 and 815cm-1 absorption-lines might be related to the noise in measurement which are nothing to do with the N-O complex.
The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Y.X. Li,H.Y. Guo,B.D. Liu,T.J. Liu,Q.Y. Hao,C.C. Liu,D.R. Yang,D.L. Que

DOI: https://doi.org/10.1016/S0022-0248(03)00956-4

IF: 1.8

2003-01-01

Journal of Crystal Growth

Abstract:The thermal annealing behavior of oxygen in neutron irradiation Czochralski-silicon (CZ-Si) has been investigated systemically. It was found that a heavy dose of neutron irradiation accelerated the oxygen precipitation in CZ-Si under higher annealing temperature (1070–1130°C). We attribute this effect to the form of defect cluster induced by neutron irradiation, it may be as the core for the oxygen precipitation heterogeneous nuclei and those shorten the nucleation time and accelerate oxygen precipitates in the bulk of Si wafer. In addition, the oxygen diffusion is enhanced by the presence of a large quantity of vacancies near the surface of the wafer.
Compensating Impurity in High Purity Silicon Single Crystal Investigated by Photo-Thermal Ionization Spectroscopy

Yu Chen-Hui,Zhang Bo,Yu Li-Bo,Li Ya-Jun,Lu Wei,Shen Xue-Chu

DOI: https://doi.org/10.7498/aps.57.1102

2008-01-01

Abstract:The optimum photo-thermal ionization range near liquid helium temperature for the shallow impurities in n type high purity silicon single crystal was determined experimentally. At temperature within this range, the high resolution photo-thermal ionization spectra (PTIS) of this sample were measured. Positive PTIS responses from the majority residual impurity phosphor (P) and compensating impurity boron (B) were observed by simultaneously irradiating the sample with far infrared and band-edge light. Under action of applied external magnetic fields, the positive response from compensating impurity B changes to negative response. The posibility of these phenomena being the result of temperature effect was excluded, which revealed the deficiency of Darken model and supported the model of rapid recombination of minority carriers for PTIS response of compensating impurity in elemental semiconductors.
Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Yuanchao Huang,Rong Wang,Yiqiang Zhang,Deren Yang,Xiaodong Pi

DOI: https://doi.org/10.1088/1674-1056/ac4234

2022-01-01

Chinese Physics B

Abstract:As a common impurity in 4H silicon carbide (4H-SiC), hydrogen (H) may play a role in tuning the electronic properties of 4H-SiC. In this work, we systemically explore the effect of H on the electronic properties of both n-type and p-type 4H-SiC. The passivation of H on intrinsic defects such as carbon vacancies (V-C) and silicon vacancies (V-Si) in 4H-SiC is also evaluated. We find that interstitial H at the bonding center of the Si-C bond (H-i(bc)) and interstitial H at the tetrahedral center of Si (H-i(Si-te)) dominate the defect configurations of H in p-type and n-type 4H-SiC, respectively. In n-type 4H-SiC, the compensation of H-i(Si-te) is found to pin the Fermi energy and hinder the increase of the electron concentration for highly N-doped 4H-SiC. The compensation of H-i(bc) is negligible compared to that of V-C on the p-type doping of Al-doped 4H-SiC. We further examine whether H can passivate V-C and improve the carrier lifetime in 4H-SiC. It turns out that nonequilibrium passivation of V-C by H is effective to eliminate the defect states of V-C, which enhances the carrier lifetime of moderately doped 4H-SiC. Regarding the quantum-qubit applications of 4H-SiC, we find that H can readily passivate V-Si during the creation of V-Si centers. Thermal annealing is needed to decompose the resulting V-Si-nH (n = 1-4) complexes and promote the uniformity of the photoluminescence of V-Si arrays in 4H-SiC. The current work may inspire the impurity engineering of H in 4H-SiC.
Effect of Pretreatment on Thermal Donors in Neutron-Irradiated Czochralski Silicon

Deng Xiaoran,Shihe Yang

2007-01-01

Abstract:The influence of pretreatment on the thermal donors (TD) in neutron-irradiated Czochralski silicon is investigated with four-point probe measurement and Fourier transform infrared spectrometry.The results show that the amount and the generation rate of the thermal donors are depressed after preheating treatment at 650℃.After rapid thermal processing at 1200℃ in N2 atmosphere,the number of the donors is depressed in irradiated silicon; but in Ar atmosphere,the number of the donors is depressed in non-irradiated silicon.
Study of low temperature far infrared absorption spectrum on thermal donor and shallow thermal donor in nitrogen-doped silicon

Deren Yang,Duanlin Que

1995-01-01

Abstract:The effect of nitrogen impurity in single crystal silicon on thermal donors and shallow thermal donors was investigated by means of low temperature (8K) far infrared absorption technique. It is considered that nitrogen atoms in silicon can suppress the formation of thermal donor, and the shallow thermal donors are correlated directly with the oxygen-nitrogen complexes.
Neutron Irradiation Effect on Amorphous Porous Silica

Qingyi Feng,Hongxiang Deng,Biyi Wang,Bo Li,Xia Xiang,Li,Xiaodong Yuan,Wanguo Zheng,Hongdong Yang,Sean Li,Xiaotao Zu

DOI: https://doi.org/10.1111/jace.18718

IF: 4.186

2022-01-01

Journal of the American Ceramic Society

Abstract:Porous silica is widely used as antireflection films in inertial confinement fusion facilities and be irradiated by high fluence neutron. To date, the neutron irradiation effect of amorphous porous silica is still unclear. In this paper, we give a comprehensive insight into neutron irradiation effect on microstructure, mechanical, and optical properties of porous silica under 14 MeV neutron irradiation by using molecular dynamics and density-functional theory-based methods. We find that, for microstructure, neutron irradiation elongates Si-O bond distance, obviously reduces the max value of Si-O-Si bond angle, coordination number distribution, and increases Si3+ and non-bridging oxygen defects. The bulk modulus, shear modulus, and Young's modulus are all obviously reduced due to neutron irradiation, but Poisson's ratio changes relatively small. The light transmittance is reduced, and the optical absorption coefficient is increased after neutron irradiation, especially in the photon energy range of 3-4 eV, which is detrimental to the resistance of laser-induced damage. Moreover, we find that neutron irradiation has more influence on high-porosity porous silica than low-porosity porous silica, which is mainly due to the higher defect percentage in high porosity. Present work is expected to be valuable in the study of degradation mechanism of nuclear material under neutron radiation.
Deep Levels in Gamma-Ray Irradiated N-Type and P-Type Hydrogen-Grown Float-Zoned Silicon

MH YUAN,DC PENG,QZ PENG,YH ZHANG,JQ LI,GG QIN

DOI: https://doi.org/10.1063/1.351285

IF: 2.877

1992-01-01

Journal of Applied Physics

Abstract:The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with gamma-rays from Co-60) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by gamma-rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in gamma-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in gamma-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevant to the type of irradiation.
Effect of Thermal Pretreatment on Electron-Irradiation Induced Defects in Hydrogen-Grown Silicon

J WU,GG QIN

DOI: https://doi.org/10.1063/1.97854

IF: 4

1987-01-01

Applied Physics Letters

Abstract:Wafers of float zone Si grown in hydrogen (Si[H]) were annealed at various temperatures in the range of 300–750 °C before irradiation with 5 MeV electrons. It was found that hydrogen-related deep levels were no longer observed, when the preannealing temperature was above 500 °C (450 °C) in the case of irradiated n-type Si[H] (p-type Si[H]) samples. Similarly, the convergence of annealing temperatures of different irradiation defects towards a common temperature normally observed in Si[H] was no longer observed, if the Si[H] sample had been annealed at or above 550 °C. A dynamic model is proposed to explain the experimental results.
Effect of Iron on Oxygen Precipitation in Nitrogen-Doped Czochralski Silicon

XW Zhang,DR Yang,RX Fan,JX Zhang,DL Que

DOI: https://doi.org/10.1063/1.368854

IF: 2.877

1998-01-01

Journal of Applied Physics

Abstract:The effect of iron on oxygen precipitation in nitrogen-doped Czochralski (NCZ) silicon was investigated by Fourier transform infrared spectroscopy at room temperature or at liquid helium temperature. The experiments revealed that the oxygen precipitation could be enhanced by the contamination of iron in common Czochralski (CZ) silicon, or by the doping of nitrogen in NCZ silicon. In NCZ silicon, iron did not affect the precipitation of oxygen during annealing at high temperatures. After preannealing at 750 °C, the oxygen precipitation in NCZ silicon was suppressed due to the addition of iron. It is concluded that the generated iron nitride, which is related to an optical absorption line at 669 cm−1, emits self-interstitial silicon atoms to impede the nucleation of oxygen precipitates at low temperatures.
Effects of Nitrogen Impurities on the Microstructure and Electronic Properties of P-Doped Si Nanocrystals Emebedded in Silicon-Rich Sinx Films

Deng-Hao Ma,Wei-Jia Zhang,Rui-Ying Luo,Zhao-Yi Jiang,Qiang Ma,Xiao-Bo Ma,Zhi-Qiang Fan,Deng-Yuan Song,Lei Zhang

DOI: https://doi.org/10.1016/j.spmi.2016.03.009

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:Phosphorus doped Si nanocrystals (SNCs) emebedded in silicon-rich SiNx:H films were prepared using plasma enhanced chemical vapor deposition technique, and the effects of nitrogen incorporation on the microstructure and electronic properties of the thin films have been systematically studied. Transmission electron microscope and Raman observation revealed that nitrogen incorporation prevents the growth of Si nanocrystals, and that their sizes can be adjusted by varying the flow rate of NH3. The reduction of photoluminescence (PL) intensity in the range of 2.1-2.6 eV of photon energy was observed with increasing nitrogen impurity, and a maximal PL intensity in the range 1.6-2.0 eV was obtained when the incorporation flow ratio NH3/(SiH4+H-2+PH3) was 0.02. The conductivity of the films is improved by means of proper nitrogen impurity doping, and proper doping causes the interface charge density of the heterojunction (H-J)device to be lower than the nc-Si:H/c-Si H-J device. As a result, the proper incorporation of nitrogen could not only reduce the silicon banding bond density, but also fill some carrier capture centers, and suppress the nonradiative recombination of electrons. (C) 2016 Elsevier Ltd. All rights reserved.
Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon

Shangjie Jin,Peng Wang,Yazhou Qin,Can Cui,Deren Yang,Xuegong Yu

DOI: https://doi.org/10.1088/1361-648x/ab7e5d

2020-01-01

Journal of Physics Condensed Matter

Abstract:We have investigated the mechanical properties of neutron irradiated Czochralski (NICZ) silicon using nanoindentations combined with micro-Raman spectroscopy. It is found that NICZ silicon shows higher hardness (similar to 13% higher) than non-irradiated silicon, with a slightly lower Young's modulus. When the samples were subjected to isochronal anneals in the temperature range of 250 degrees C-650 degrees C, the hardness of NICZ silicon gradually decreases as the temperature increases and it is finally comparable to that of the non-irradiated silicon. The vacancies and vacancy-oxygen defects induced by neutron irradiation in NICZ silicon annihilate or transform into more complex defects during the annealing processes. It suggests that the vacancy defects play a role in the evolution of hardness, which promote phase transition from the Si-I phase to the stiffer Si-II phase in NICZ silicon during indentation. In addition, the irradiation induced vacancy defects could lead to the lower Young's modulus.

Effects of Impurity on the IR Absorption Bands of Si-H Centers

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing

The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

Infrared Spectra of Silicon Nanowires

Effect of Hydrogen Treatment Upon Silicon Surface Investigated with the Multiple Internal Reflection Infrared Spectroscopy

Study on the infrared absorption of nitrogen-oxygen complex in silicon

The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Compensating Impurity in High Purity Silicon Single Crystal Investigated by Photo-Thermal Ionization Spectroscopy

Assessing the Effect of Hydrogen on the Electronic Properties of 4H-Sic

Effect of Pretreatment on Thermal Donors in Neutron-Irradiated Czochralski Silicon

Study of low temperature far infrared absorption spectrum on thermal donor and shallow thermal donor in nitrogen-doped silicon

Neutron Irradiation Effect on Amorphous Porous Silica

Deep Levels in Gamma-Ray Irradiated N-Type and P-Type Hydrogen-Grown Float-Zoned Silicon

Effect of Thermal Pretreatment on Electron-Irradiation Induced Defects in Hydrogen-Grown Silicon

Effect of Iron on Oxygen Precipitation in Nitrogen-Doped Czochralski Silicon

Effects of Nitrogen Impurities on the Microstructure and Electronic Properties of P-Doped Si Nanocrystals Emebedded in Silicon-Rich Sinx Films

Effects of Vacancy Defects on the Mechanical Properties in Neutron Irradiated Czochralski Silicon