Abstract:Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.

Effect of Pretreatment on Thermal Donors in Neutron-Irradiated Czochralski Silicon

Behavior of Irradiation Donor(id) Arer Annealing in Neutron Transmutation Doping Czochralski Grown Silicon

Effect of heat treatment on the optical and electrical properties of nitrogen-doped silicon samples

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Investigation of Thermal Donors in Czochralski Silicon Annealed at 450°C under High Pressure of 1Gpa

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Depth Profile of Thermal Donors in NTDCZSi

The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Enhanced Formation of Thermal Donors in Germanium Doped Czochralski Silicon Pretreated by Rapid Thermal Annealing

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Effect of Light Germanium Doping on Thermal Donors in Czochralski Silicon Wafers

Effect of Heat Treatment on Carbon in Multicrystalline Silicon

Effect Of Nitrogen Doping On The Dissolution Of Oxygen Precipitates In Czochralski Silicon During Rapid Thermal Annealing

THE FORMATION BEHAVIOR OF THERMAL DONORS IN CAST MULTICRYSTALLINE SILICON

Nitrogen Effects on Thermal Donor and Shallow Thermal Donor in Silicon

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Shallow thermal donors in silicon doped with isotopic oxygen

Effects of Rapid Thermal Processing on Oxide Precipitation in Conventional and Nitrogen‐doped Czochralski Silicon

Effect of Rapid Thermal Processing at High Temperature on Generation and Annihilation of Thermal Donors