Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

Xiang-Ti Meng,Ji-Wu Xiong,Yong-Chang Du

DOI: https://doi.org/10.1002/pssa.2211430236

1994-01-01

Abstract:A new and broad infrared (IR) band in an annealed neutron transmutation doped (NTD) floating zone (FZ) silicon is presented. Deep level transient spectroscopy (DLTS) was used to characterize the hydrogen-doped silicon and analyze the broad IR band.

What problem does this paper attempt to address?

The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

XT MENG,GG QIN,YC DU,YF ZHANG

DOI: https://doi.org/10.1063/1.340342

IF: 2.877

1988-01-01

Journal of Applied Physics

Abstract:A strong, wide infrared absorption band in 2050–2150-cm−1 range has been found in neutron-transmutation-doped silicon grown by the floating-zone method in a hydrogen atmosphere and annealed at 650 °C. This band is due to the stretching vibration of the Si–H bond, formed as hydrogen atoms diffuse, aggregate, and saturate silicon dangling bonds in the neutron-irradiation disordered region. This absorption band is similar to that of hydrogenated amorphous silicon in the 1900–2150-cm−1 range except that its vibration frequency is somewhat higher. The disordered region defect and its amorphous-siliconlike property could be observed because of the incorporation of hydrogen. The hydrogen concentration of the floating-zone melted silicon grown in a hydrogen atmosphere used in this study is estimated to be (1–2)×1017 cm−3 on the basis of the strength of this wide infrared absorption band. A possible reason for this vibration frequency shift is discussed.
INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

ZHANG YU-FENG,DU YONG-CHANG,WENG SHI-FU,MENG XIANG-TI,ZHANG BING-ZHONG

DOI: https://doi.org/10.7498/aps.34.849

IF: 0.906

1985-01-01

Acta Physica Sinica

Abstract:Infrared absorption spectra of neutron irradiated FZ-Si grown in hydrogen atmosphere have been measured in wavenumber ranges 1800—300 em-1 and 400—200cm-1 by FTIR. The annealing behaviour of stronger absorption bands has been shown. By comparing with spectral results of proton implanted silicon measured by IR and neutron irradiated FZ-Si grown in hydrogen atmosphere measured by DLTS, the possible constructions of H-related centers are discussed.
Behavior of Irradiation Donor(id) Arer Annealing in Neutron Transmutation Doping Czochralski Grown Silicon

Bingyan Ren,Yangxian Li,Ju Yulin,Wang Qinglu,Pingjuan Niu,Gan Zhongwei,QI SHOU-REN,Chengchun Tang,Xintang Huang,Xiaoxia Ding

1998-01-01

Abstract:Behavior of the irradiation donor(ID) after annealing in NTDCZSi has been studied by using various kinds of experimental means and the effect of neutron doses and oxygen concentration on the formation of ID is discussed. The donor plateau generated in heat treatment below 750℃is reported for the first time. The results show that ID produces a shallow donor energy level (- 43meV) in the forbidden band. Its electric activity originates from the interface state of Si/SiOz precipitate and its structure is metastable complex which consists of irradiation defects, silicon, silicon dioxide and carbon.
Defects in nitrogen-doped multicrystalline silicon

Deren Yang,Dongsheng Li,M. Ghosh,H.J. Möller

DOI: https://doi.org/10.1016/j.physb.2003.10.027

2004-01-01

Abstract:The cast multicrystalline silicon (mc-Si) grown by directional solidification in silicon nitride-coated silica crucibles has been investigated by means of the Fourier transmission infrared spectroscopy technique. An infrared absorption band at 1206cm−1 was found in the specimens, which were located at the top center position of a mc-Si ingot. The defect was very stable during annealing up to 24h in the temperature range 450–1150°C. The results of deep level transition spectroscopy experiments showed that no deep energy level was directly linked to the defect. The possible origin of the new defect and its influence on solar cells are discussed. This defect is suggested to be associated with the formation of boron–nitrogen complexes.
Shallow thermal donors in silicon doped with isotopic oxygen

Deren Yang,M Klevermann,L.I Murin

DOI: https://doi.org/10.1016/S0921-4526(01)00427-6

2001-01-01

Abstract:The shallow thermal donors (STDs) in silicon doped with isotopic oxygen 16O and 18O have been investigated. The sample annealed at 1275°C for 4h in a nitrogen ambient was measured by a Fourier transform infrared (FTIR) spectrometer at 10K. In comparison, a nitrogen doped Czochralski (NCZ) silicon sample in which nitrogen–oxygen complexes existed was also checked by the FTIR spectrometer. It was found that STDs were formed in the oxygen isotope doped silicon during annealing at high temperature. It is considered that nitrogen could be involved in the generation of STDs. The line positions of the STDs were almost the same as that of the N–O complexes in NCZ silicon. The small shift of some absorption lines of STDs was also observed. In addition, a new unidentified shallow center was found and discussed.
Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

I. V. Antonova,D. Yang,V. P. Popov,V. I. Obodnikov,A. Misiuk

DOI: https://doi.org/10.1016/S0167-9317(02)00943-7

IF: 2.3

2003-01-01

Microelectronic Engineering

Abstract:A comparison of the thermal donor formation processes and related phenomena in the hydrogen-implanted Czochralski-grown silicon wafers one of which was doped with nitrogen during the growth was made. An average thermal donor concentration in the crystals was found to be higher in the nitrogen-doped silicon, but the difference was not very large. Suppression of the impurity gettering on radiation damages, and more effective passivation of the free carriers by hydrogen in near-surface layer was found for nitrogen-doped silicon.
Infrared Spectra of Silicon Nanowires

Junjie Niu,Deren Yang,Jian Sha,Jian Nong Wang,Ming Li

DOI: https://doi.org/10.1016/j.matlet.2006.06.017

IF: 3

2007-01-01

Materials Letters

Abstract:Infrared (IR) spectra of the silicon nanowires (SiNWs) with oxide layer are analyzed by introducing the disorder-induced mechanical coupling between the optically active oxygen asymmetric stretch (AS) and inactive oxygen asymmetric stretch (I-AS) modes in terms of the transverse-optic (TO) and longitudinal-optic (LO) vibrational modes. The shapes of the IR spectra are similar to that of the reported SiO2, indicating that the SiNWs possess an oxide layer outside. The TO frequencies of coupled AS and I-AS are experimentally observed as peak at approximately 1085 cm(-1) and its shoulder of 1200 cm(-1), respectively. The other TO absorption peaks of similar to 468 cm(-1), similar to 480 cm(-1), and similar to 808 cm(-1) are also observed. Furthermore, the intensity of the AS-mode TO band centered at similar to 1085 cm(-1) decreases while those of silicon lattice absorption peaks are enhanced with the crystalline quality increased. (c) 2006 Elsevier B.V. All rights reserved.
Effects of Impurity on the IR Absorption Bands of Si-H Centers

Du Yongchang,Zhang Yufeng,Weng Shifu

DOI: https://doi.org/10.1117/12.970897

1985-01-01

Abstract:The IR bands in N-type and P-type floating-zone silicon grown in hydrogen atmosphere before and after neutron irradiation have been studied using FT-IR spectroscopy. The effects of impurity on the IR bands of Si-H centers have been observed.
High Near Infrared Absorption of Hyper‐doped Silicon Induced by Co‐doping of Sulfur and Nitrogen

Yaoyu Xuan,Ting Zhang,Bohan Liu,Ruihan Yang,Waseem Ahmad,Zhijun Liu,Zhi Chen,Shibin Li

DOI: https://doi.org/10.1002/pssa.201600524

2016-01-01

Abstract:In this paper, we investigate the dependence of NIR absorption of hyper‐doped silicon on different sulfur and nitrogen doping ratio. With different molecular proportion of N2 and SF6 background gas, femtosecond laser irradiation was used to implant co‐doping of sulfur and nitrogen into silicon. The hyper‐doped silicon presents high absorption properties in NIR and visible range. The results of first‐principles calculations demonstrate the high absorption in NIR is ascribed to the induced impurity energy levels in hyper‐doped silicon. The nitrogen doping process improves the crystallinity in the doped layer because the doped nitrogen repairs defects in silicon lattices. Given the thermal stability of nitrogen, the co‐doping dopants limit the diffusion of sulfur during the annealing process. The co‐doping process proposed in this paper provides a method to fabricate high performance NIR silicon optoelectronic device.
Hydrogen-Defect Shallow Donors in Si

XT Meng,AG Kang,SR Bai

DOI: https://doi.org/10.1143/jjap.40.2123

IF: 1.5

2001-01-01

Japanese Journal of Applied Physics

Abstract:The influence of different original Si crystals and neutron fluence on the formation of hydrogen-defect shallow donors in neutron-irradiated floating-zone silicon grown in hydrogen atmosphere (FZ Si:H2) is studied. The annealing behavior of neutron-irradiated floating-zone silicon grown in argon atmosphere (FZ Si:Ar), neutron-irradiated FZ Si:H2 kept for three years at room temperature (RT) and only fast-neutron-irradiated FZ Si:H2 reveals that shallow donors are directly related to hydrogen and defects, especially to thermal-neutron-radiation point defects. The maximum concentration of the shallow donors approaches to a stable value with an increase in neutron fluence. Some characteristics of the shallow donors are discussed.
DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

YC DU,YF ZHANG,GG QIN,XT MENG

DOI: https://doi.org/10.7498/aps.33.477

1985-01-01

Abstract:The interaction between hydrogen and defects in neutron irradiated n-type FZ silicon has been studied with deep level transient spectroscopy, transient capacitance at constant temperature and infrared absorption spectroscopy. It has been observed that the absorption peaks of infrared spectroscopy corresponding to the interstitial hydrogen reduce after neutron irradiation. In the unannealed neutron irradiated n-type FZ silicon grown in hydrogen, a new defect-Z center has been observed for the first time. Because the energy level of the Z center (Ec-0.20 eV) is very close to the energy level of the A center (Ec-0.16 eV) and the concentration of the former is much lower than that of the latter. In order to detect the Z center, neutron dose has been selected so that the Fermi level locates at several kT below the energy level of A center. In all probability the Z center is a hydrogen-vacancy complex. The possible electron structure of this center is discussed.
Far-infrared properties of helium-doped silicon

wei ren,qingyan zhou,bing li,hongxiang deng,shaobo han,wei liu,yong jiang,xia xiang,xiaotao zu

DOI: https://doi.org/10.1139/cjp-2014-0403

2015-01-01

Canadian Journal of Physics

Abstract:Single crystal silicon is an important material used for semiconductor devices and also a potential material in device research. Far-infrared optical properties are studied for the helium ion implanted samples with different fluences of 5.0 x 10(16), 1.0 x 10(17), 2.0 x 10(17), and 4.0 x 10(17) cm(-2). The absorption coefficient and refractive index of silicon with different helium concentrations are measured in the wave number range from 4 to 85 cm(-1) and temperature range from 145 to 520 K. The results show that the absorption coefficient increases with increasing fluence of helium ions, but the refractive index decreases. The correlations between absorption coefficient and refractive index and temperature of all samples are similar. The refractive index increases with temperature in the whole measurement temperature range, but the absorption coefficient has different trends in the different wavebands. The absorption coefficient decreases with the increase of temperature in the region below 12 cm(-1); however, the absorption coefficient increases when the wave number is larger than 30 cm(-1). The absorption coefficient curves at different wavebands are well fitted by the Drude model. A large number of helium bubbles and defects, such as voids and dislocations have been observed in the implanted area by transmission electron microscopy (TEM), which contributes to the increase of optical absorption.
Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Can Cui,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.3050313

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Nitrogen and vacancies were intentionally introduced into Czochralski silicon crystal by doping and neutron irradiation, respectively, to study the effect on oxygen precipitation. A series of isochronal anneals in the temperature range of 700-1150 degrees C revealed that vacancies showed the prominent enhancement effect on oxygen precipitation at temperatures below 1000 degrees C, whereas nitrogen exhibited the evident enhancement in oxygen precipitation at temperatures above 900 degrees C. It is suggested that the vacancies induced by neutron irradiation form VnOm (n, m >= 1) complexes acting as nuclei to facilitate oxygen precipitation in silicon. However, the VnOm complexes are not stable at higher temperatures; thus, the enhancement effect of vacancies on oxygen precipitation decreases evidently as the temperature increases above 1000 degrees C. In addition to the formation of new nuclei based on the VnOm complexes, the growth of grown-in oxygen precipitates is also facilitated by the incorporation of high concentration vacancies in the neutron-irradiated silicon. In nitrogen-doped silicon, the enhanced oxygen precipitation at high temperatures primarily depends on nitrogen concentration rather than vacancy concentration as a result of forming stable N2V2 complexes acting as precipitate nuclei.
Infrared Absorption of Nitrogen–oxygen Complex in Silicon

DR Yang,XY Ma,RX Fan,DS Li,JX Zhang,LB Li,DL Que,K Sumino

DOI: https://doi.org/10.1016/s0921-5107(99)00502-4

2000-01-01

Abstract:The infrared optical absorption of nitrogen–oxygen complex in Czochralski (CZ) silicon measured by a Fourier Transmission Infrared Spectroscope (FTIR) has been studied. The CZ silicon samples grown in N–O complex were annealed in the temperature range of 450–1150°C for 10, 20 and 30 min. It was found that the variation of the optical lines measured in the middle infrared range and that in the far infrared range had the same tendency during annealing. The relations of the absorption lines in the middle and far infrared range were built. It is considered that the absorption lines in both infrared ranges come from same defects in silicon.
Deep Levels in Gamma-Ray Irradiated N-Type and P-Type Hydrogen-Grown Float-Zoned Silicon

MH YUAN,DC PENG,QZ PENG,YH ZHANG,JQ LI,GG QIN

DOI: https://doi.org/10.1063/1.351285

IF: 2.877

1992-01-01

Journal of Applied Physics

Abstract:The generation rates and annealing behavior of the irradiation defects in n- and p-type hydrogen-grown float-zoned silicon (irradiated with gamma-rays from Co-60) have been studied by the deep-level transient spectroscopy technique and compared with those of irradiated argon-grown float-zoned silicon. Assuming the generation rate of the irradiation defects created by gamma-rays in argon-grown float-zoned silicon is 1, then the generation rates of the A center, divacancy, and phosphorus vacancy in n-type hydrogen-grown float-zoned silicon are 0.23, 0.78, and 0.19, respectively, while the generation rates of the divacancy and H(0.37 eV) in p-type hydrogen-grown silicon are 0.79 and 0.10, respectively. Due to the existence of hydrogen, the generation rate reduction of the major irradiation defects in gamma-ray irradiated silicon is more pronounced than that in 1-MeV electron irradiated silicon. Three hydrogen-related defects, H(0.10 eV), H(0.29 eV), and H(0.56 eV), were seen in gamma-ray irradiated hydrogen-grown float-zoned silicon, among which H(0.10 eV) and H(0.56 eV) were reported by us to exist in electron irradiated hydrogen-grown float-zoned silicon, while H(0.29 eV) is reported for the first time. The convergence effect of annealing temperatures for the irradiation defects was observed. That is, the annealing temperatures at which the irradiation defects diminish are almost the same for most irradiation defects, similar to that in the case of electron irradiation, was observed, showing that this effect is characteristic of the hydrogen behavior in silicon, and irrelevant to the type of irradiation.
Defect Annealing of Neutron-Irradiated Silicon Crystals

Meng Xiang-Ti,Zuo Kai-Fen

DOI: https://doi.org/10.1007/bf00360730

IF: 4.5

1995-01-01

Journal of Materials Science

Abstract:Doppler broadening positron annihilation spectroscopy has been used to investigate the effects of neutron integrated flux and hydrogen on annealing behaviour of defects in silicon crystals. The concentration of neutron radiation defects was estimated, activation energy of some annealing stages was calculated and some specific annealing phenomena were explained.
INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

DU YONG-CHANG,YAN MAO-XUN,ZHANG YU-FENG,GUO HAI,HU KE-LIANG

DOI: https://doi.org/10.7498/aps.36.1427

IF: 0.906

1987-01-01

Acta Physica Sinica

Abstract:FTIR was employed to study doped silicon passivated by atomic hydrogen, deuterium and implanted by proton. The localized vibrational modes of [BD] pairs, 1.560 cm-1 and 1263 cm-1, were excited with different passivation conditions of atomic deuterium. This shows that there are at least two possible positions for deuterium atoms around acceptor B. IR absorption spectra of doped silicon implanted by proton are different from that of undoped silicon, the hydrogen atoms prefer bonding around B acceptors. Only 1% implanted hydrogen atoms were turned into photoactive centers, most of implanted hydrogen atoms formed non-photoactive cen-ters, they might be hydrogen molecules, Hz.
Depth Profile of Thermal Donors in NTDCZSi

YX Li,MX Pan,TJ Liu,QY Hao,HY Liu,CC Liu,YS Xu,DR Yang,DL Que

DOI: https://doi.org/10.1002/pssc.200306197

2003-01-01

Abstract:The depth profile of thermal donors (TDs) produced by annealing neutron transmutation-doped Czochralski silicon (NTDCZSi) at high temperatures above 1000 degreesC first and then at 450 degreesC has been studied by means of the thermal conversion spreading resistance (TCSR). The concentration of the TDs increases with the distance from the surface of the sample, and its depth profile can be described by the error function when the annealing temperature is low or the annealing time is short. A peak is formed in the depth profile under the annealing condition of 1100 degreesC for 4 h. Combining with an infrared absorption study, it is found that the curves of the diffusivity coincide with the loss of interstitial oxygen. These results indicate that the distribution of the TDs depends on both the out-diffusion and the precipitation of oxygen. Neutron irradiation accelerates the out-diffusion of the oxygen in the surface region of the silicon and the oxygen precipitation in the bulk.
Study on the infrared absorption of nitrogen-oxygen complex in silicon

Deren Yang,Duanlin Que,Sunimo Koji

1995-01-01

Abstract:The infrared absorption characteristics of N-doped and N-undoped single-silicon produced under different conditions were experimentally investigated by means of the Fourier transform infrared spectroscope (FTIR) at either room temperature (300K) or low temperature (8K). The results show that (1) the 1030cm-1, 1000cm-1, and 806cm-1 optical absorption lines are related to the nitrogen-oxygen complex in the nitrogen-doped CZ silicon; (2) the 839cm-1 absorption-line is related to the silicon nitride formed on the silicon surface during annealing in the nitrogen atmosphere; (3) whereas the 1021cm-1 and 815cm-1 absorption-lines might be related to the noise in measurement which are nothing to do with the N-O complex.
Characters of NTD FZ(H 2 ) Si Kept at Room Temperature for Three Years

Meng Xiangti

DOI: https://doi.org/10.1088/0256-307x/6/2/009

1989-01-01

Chinese Physics Letters

Abstract:It has been found that the hydrogen-defect shallow donors do not appear, and some strong neutron radiation-induced Si-H IR bands, such as 1832 and 2054 cm-1 disappear; but the strength of some others, e.g. 1979 and 2065 cm-1 increases greatly for NTD FZ(H2) Si kept at room temperature for 3 years. These changes indicate that at room temperature simple point defects diffuse and interact, and hydrogen atoms trap the vacancy and vacancy cluster defects. This gives important information in the discussion of the micro-structures of the above Si-H IR bands.

Broad infrared band in neutron-irradiated silicon grown in hydrogen atmosphere

The Nature of a 2050–2150-Cm−1 Infrared Band in Neutron-Transmutation-doped Silicon Grown by the Floating-Zone Method in a Hydrogen Atmosphere

INFRARED ABSORPTION OF NEUTRON-IRRADIATED FZ-Si GROWN IN HYDROGEN ATMOSPHERE

Behavior of Irradiation Donor(id) Arer Annealing in Neutron Transmutation Doping Czochralski Grown Silicon

Defects in nitrogen-doped multicrystalline silicon

Shallow thermal donors in silicon doped with isotopic oxygen

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Infrared Spectra of Silicon Nanowires

Effects of Impurity on the IR Absorption Bands of Si-H Centers

High Near Infrared Absorption of Hyper‐doped Silicon Induced by Co‐doping of Sulfur and Nitrogen

Hydrogen-Defect Shallow Donors in Si

DEEP LEVEL DEFECTS RELATED TO HYDROGEN IN NEUTRON IRRADIATED SILICON CONTAINING HYDROGEN

Far-infrared properties of helium-doped silicon

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Infrared Absorption of Nitrogen–oxygen Complex in Silicon

Deep Levels in Gamma-Ray Irradiated N-Type and P-Type Hydrogen-Grown Float-Zoned Silicon

Defect Annealing of Neutron-Irradiated Silicon Crystals

INFRARED ABSORPTION OF DOPED SILICON PASSIVATED BY ATOMIC HYDROGEN, DEUTERIUM AND IMPLANTED BY PROTON

Depth Profile of Thermal Donors in NTDCZSi

Study on the infrared absorption of nitrogen-oxygen complex in silicon

Characters of NTD FZ(H 2 ) Si Kept at Room Temperature for Three Years