Abstract:Nitrogen-doped Czochralski (NCZ) silicon has been a base material for integrated circuits. The interaction between nitrogen (N) and interstitial oxygen (Oi) atoms in the low temperature regime (300–650 °C), which leads to N–O complexes in the form of NOx (x = 1, 2, or 3), forms a series of shallow thermal donors (denoted as N–O STDs). Such N–O STDs are detrimental to the stability of electrical resistivity of NCZ silicon. In this work, we have experimentally investigated the elimination of N–O STDs in NCZ silicon by means of conventional furnace anneal (CFA) and rapid thermal anneal at elevated temperatures ranging from 900 to 1250 °C, aiming to explore the underlying mechanism. It is found that most of the N–O STDs formed in NCZ silicon can be eliminated by a very short period of anneal at the aforementioned temperatures, providing solid evidence for the viewpoint that the elimination of N–O STDs is ascribed to the decomposition of NOx complexes. Somewhat unexpectedly, the residual N–O STDs are much more after the 1250 °C/2 h CFA than after the 900 °C/2 h or 1000 °C/2 h counterpart, which is found to be due to the fact that more nitrogen pairs [(N2)s] are remaining after the 1250 °C/2 h CFA. It is proposed that most of the (N2) atoms are involved in the growth of grown-in oxide precipitates during the 900 or 1000 °C/2 h CFA. The first-principles calculations and molecular dynamics simulation indicate that the elimination of N–O STDs is essentially ascribed to the destruction of “NO ring” that is the core of NOx complexes. Furthermore, based on the experimental and theoretical results, we have made a thorough thermodynamic analysis to account for the details of elimination of N–O STDs as revealed in this work. It is believed that our experimental and theoretical studies have gained more insight into the N–O STDs in NCZ silicon.

Behavior of Irradiation Donor(id) Arer Annealing in Neutron Transmutation Doping Czochralski Grown Silicon

Depth Profile of Thermal Donors in NTDCZSi

Formation of Nitrogen-Oxygen Donors in N-doped Czochralski-silicon Crystal

Donor Formation in Nitrogen Doped Silicon

Donor behavior of nitrogen impurity in nitrogen-doped CZ-Si

Effect of Pretreatment on Thermal Donors in Neutron-Irradiated Czochralski Silicon

Formation of the thermal donors in the hydrogen-implanted nitrogen-doped silicon crystal

Shallow thermal donors in silicon doped with isotopic oxygen

Enhanced Oxygen Precipitation In Neutron-Irradiated Nitrogen-Doped Czochralski Silicon Crystal

Annealing Behaviour of Defects in Neutron Transmutation Doped Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Shallower Thermal Donor and Nitrogen-Oxygen Complex in Nitrogen Doped Czochralski Silicon

Thermal Acceptor Formation in Nitrogen-Doped Silicon

The Intrinsic Gettering in Neutron Irradiation Czochralski-Silicon

Annealing Behavior of Defects in Neutron-Transmutation-Doped Floating Zone Si

Influence of nitrogen on new donor formation in silicon crystal

Influence of High Pressure Annealing on Electrical Properties of Surface Layer of Neutron Irradiated or Germanium-Doped Czochralski-Grown Silicon

Formation characteristic of new donor in N-doped silicon

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

The effects of neutron irradiation on the oxygen precipitation in Czochralski-silicon

Defects Evolution in N-Type 4H-Sic Induced by Electron Irradiation and Annealing